Journal of Semiconductors (半导体学报 - 中国科学院半导体研究所) | SinoTechIntel Research Archive

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Published Research PapersFiltered: Year 2025 • Vol. 32 • 9

Showing 3 of 115 peer-reviewed papers with full Graphical Abstracts.

Original ResearchVol. 32, Issue 9 • pp. 100-112DOI: 10.1088/1674-4926/25090006• Jan 15, 2025

Transport Mechanism of Oxide-Based Programmable Diode

Authors: Junru Qu, Wentai Xia, Jifang Cao, Xueyang Li, Ran Cheng, Dong Liu, Bing Chen

In this work, oxide-based programmable diodes (PDs) with a TiN/HfO2/Si/Al structure are fabricated, and their electron transport mechanisms are investigated. Electrical measurements reveal that the conduction and rectification performance of oxide-based PDs are mainly controlled by the interface between the oxygen vacancy (VO) filament and the semiconductor electrode. The local density of states in the filament and the band bending of the PDs are calculated using first-principles simulations. The electron transport in oxide PDs is dominated by Poole–Frenkel emission under forward bias, while under negative bias, the PDs behave like a reverse Schottky diode. These mechanistic studies are essential for device optimization and circuit design of oxide-based PDs.

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Transport Mechanism of Oxide-Based Programmable Diode

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Original ResearchVol. 32, Issue 9 • pp. 100-112DOI: 10.1088/1674-4926/25090008• Jan 15, 2025

High-speed single-mode 850 nm vertical-cavity surface-emitting laser

Authors: Si-Cong Tian

A high-speed single-mode vertical-cavity surface-emitting laser (VCSEL) is one of the most important light sources for optical interconnects in data centers. Single-mode VCSEL can improve the transmission distance. In this letter, we demonstrate a single-mode 850 nm VCSEL with a bit rate of 60 Gb/s under NRZ modulation and 104 Gb/s under PAM4 modulation across a 100 m length of OM5 fiber, without the need for equalization or a filter. In addition, by using optical injection locking, the 3 dB bandwidth is enhanced to 68.5 GHz.

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High-speed single-mode 850 nm vertical-cavity surface-emitting laser

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Original ResearchVol. 32, Issue 9 • pp. 100-112DOI: 10.1088/1674-4926/25090014• Jan 15, 2025

Enhanced Low Dose Rate Sensitivity and Pre-Irradiation Elevated-Temperature Stress Effects in Bipolar Devices: Role of Hydrogen in the Passivation Layer

Authors: Shilong Gou, Wuying Ma, Zhibin Yao, Zujun Wang, Jiangkun Sheng, Yuanyuan Xue

Enhanced low dose rate sensitivity (ELDRS) experiments were carried out on four commercial bipolar integrated circuits at dose rates ranging from 0.002 to 50 rad(Si)/s. Additionally, pre-irradiation elevated-temperature stress (PETS) experiments were conducted on the same devices at temperatures of 250 and 400 °C. The results show that for some devices, the radiation degradation when irradiated at an ultra-low dose rate of 0.002 rad(Si)/s is more than three times greater than that at a common low dose rate of 0.01 rad(Si)/s. Moreover, the maximum enhancement factor of the PETS effects reaches 20.3. It was also discovered that for devices exhibiting PETS effects, the saturation dose rate of ELDRS is less than 0.01 rad(Si)/s. A comprehensive analysis of the composition of the passivation layers indicated that the type and concentration of hydrogen bonds in these layers are the main factors contributing to the experimental outcomes.

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Enhanced Low Dose Rate Sensitivity and Pre-Irradiation Elevated-Temperature Stress Effects in Bipolar Devices: Role of Hydrogen in the Passivation Layer

Graphical Abstract