Academic Research Journal•2026•DOI: 10.26599/NR.2026.94908633
Covalent organic frameworks (COFs) with highly symmetric skeletons exhibit limited O2 adsorption and weak thermodynamic driving force for the two-electron oxygen reduction reaction (2e− ORR), constraining photocatalytic H2O2 production. Here, we modulate the local arrangement of fluorine atoms in COFs, creating para- and ortho-fluorinated variants (Fp-COFs and Fo-COFs) to induce an asymmetric electronic distribution. This asymmetry provides effective O2-adsorption sites and strengthens the driving force for 2e− ORR. Theoretical analysis reveals that asymmetric fluorination delocalizes lone-pair electrons of F atoms to adjacent carbons, producing a discretized electron distribution that enhances O2 adsorption at imine bonds. The increased electron density on these carbons facilitates electron transfer into the π* orbital of adsorbed O2, accelerating ·OOH* intermediate formation and lowering the Gibbs free energy barrier of the 2e− pathway. Consequently, Fo-COFs achieve a quantum yield of 8.8% for H2O2 photosynthesis in pure water. This work provides a new approach for tuning local electron distribution in COFs, offering guidance for rational design of efficient photocatalytic materials and broadening the application prospects of asymmetric electronic structures.
Nano-Micro Letters•2026•DOI: 10.1007/s40820-025-02012-8
Owing to the exceptional optoelectronic properties, metal halide perovskites have emerged as leading semiconductor materials for next-generation display technologies, providing perovskite light-emitting diodes (PeLEDs) great potential for high-quality color displays with a wide color gamut and pure color emission. Although laboratory-scale PeLEDs have achieved near-theoretical efficiencies, challenges such as achieving uniform large-area films, improving material stability, and enhancing patterning precision remain barriers to commercialization. This review presents a systematic analysis of scalable manufacturing and precision patterning strategies for PeLEDs, focusing on their applications in large-area lighting and full-color displays. Fabrication methods are categorized into film deposition techniques (spin-coating, blade-coating, and thermal evaporation) and patterning strategies, including top-down (photolithography, laser/e-beam lithography, and nanoimprinting) and bottom-up (patterned crystal growth, inkjet printing, and electrohydrodynamic jet printing) approaches. In this review, we discuss the advantages and limitations of each strategy, highlight current challenges, and outlook possible pathways towards scalable, high-performance PeLEDs for advanced optoelectronic applications.
Nano-Micro Letters•2026•DOI: 10.1007/s40820-025-01941-8
MXene derivatives are notable two-dimensional nanomaterials with numerous prospective applications in the domains of energy development. MXene derivative, MBene, diversifies its focus on energy storage and harvesting due to its exceptional electrical conductivity, structural flexibility, and mechanical properties. This comprehensive review describes the sandwich-like structure of the synthesized MBene, derived from its multilayered parent material and its distinct chemical framework to date. The fields of focus encompass the investigation of novel MBenes, the study of phase-changing mechanisms, and the examination of hex-MBenes, ortho-MBenes, tetra-MBenes, tri-MBenes, and MXenes with identical transition metal components. A critical analysis is also provided on the electrochemical mechanism and performance of MBene in energy storage (Li/Na/Mg/Ca/Li–S batteries and supercapacitors), as well as conversion and harvesting (CO2 reduction, and nitrogen reduction reactions). The persistent difficulties associated with conducting experimental synthesis and establishing artificial intelligence-based forecasts are extensively deliberated alongside the potential and forthcoming prospects of MBenes. This review provides a single platform for an overview of the MBene’s potential in energy storage and harvesting.
Nano-Micro Letters•2025•DOI: 10.1007/s40820-025-01724-1
Soft electronics, which are designed to function under mechanical deformation (such as bending, stretching, and folding), have become essential in applications like wearable electronics, artificial skin, and brain-machine interfaces. Crystalline silicon is one of the most mature and reliable materials for high-performance electronics; however, its intrinsic brittleness and rigidity pose challenges for integrating it into soft electronics. Recent research has focused on overcoming these limitations by utilizing structural design techniques to impart flexibility and stretchability to Si-based materials, such as transforming them into thin nanomembranes or nanowires. This review summarizes key strategies in geometry engineering for integrating crystalline silicon into soft electronics, from the use of hard silicon islands to creating out-of-plane foldable silicon nanofilms on flexible substrates, and ultimately to shaping silicon nanowires using vapor–liquid–solid or in-plane solid–liquid–solid techniques. We explore the latest developments in Si-based soft electronic devices, with applications in sensors, nanoprobes, robotics, and brain-machine interfaces. Finally, the paper discusses the current challenges in the field and outlines future research directions to enable the widespread adoption of silicon-based flexible electronics.
Nano-Micro Letters•2025•DOI: 10.1007/s40820-025-01674-8
Gate-all-around field-effect transistors (GAA-FETs) represent the leading-edge channel architecture for constructing state-of-the-art high-performance FETs. Despite the advantages offered by the GAA configuration, its application to catalytic silicon nanowire (SiNW) channels, known for facile low-temperature fabrication and high yield, has faced challenges primarily due to issues with precise positioning and alignment. In exploring this promising avenue, we employed an in-plane solid–liquid-solid (IPSLS) growth technique to batch-fabricate orderly arrays of ultrathin SiNWs, with diameters of DNW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays. By optimizing the source/drain contacts, high-performance GAA-FET devices have been successfully fabricated, based on these catalytic SiNW channels for the first time, yielding a high on/off current ratio of 10^7 and a steep subthreshold swing of 66 mV dec−1, closing the performance gap between the catalytic SiNW-FETs and state-of-the-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography. These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs, well suited for monolithic 3D integrations.