SinoTechIntel Academic Portal
Open AccessDOI: 10.1007/s40820-025-01737-wOriginal Research

Shadow-Assisted Sidewall Emission for Achieving Submicron Linewidth Light Source by Using Normal UV Photolithography

Junlong Li¹,Yanmin Guo¹,Kun Wang¹,Wei Huang¹,Hao Su¹,Wenhao Li¹,Xiongtu Zhou¹,Yongai Zhang¹,Tailiang Guo¹,Chaoxing Wu¹

College of Physics and Information Engineering, Fuzhou University

Read Executive PreviewQuick FAQ
Shadow-Assisted Sidewall Emission for Achieving Submicron Linewidth Light Source by Using Normal UV Photolithography
Graphical Abstract / Figure
Published In
Nano-Micro Letters
Published:April 22, 2025Edition:Vol. 17, Issue 1 • pp. 228Citation:Junlong Li et al. (2025), Nano-Micro Letters
Impact FactorPeer-Reviewed Core
Source JournalNano-Micro Letters
Sponsored Research Partner
Keywords & Index Terms:Submicron light sourceQuantum dotPhotoluminescencePhotolithographyShadow-assisted sidewall emissionUV lithographyOptical anti-counterfeitingMicro/nanofabrication

Key Takeaways & Executive Findings

  • • Submicron light sources are realized using only standard UV photolithography, enabling arbitrary patterns without complex nanofabrication. • A novel shadow-assisted sidewall emission (SASE) technique precisely controls polymer sidewall emission via metal shadow modulation. • Red, green, and blue submicron light sources are successfully demonstrated, with linewidth tunable by exposure dose, development time, and metal thickness. • The SASE-based light sources show strong scalability and are proven applicable in optical anti-counterfeiting, offering a cost-effective route for high-resolution micro-optics.
Sponsored Research Highlight

Abstract

Micro light sources are crucial tools for studying the interactions between light and matter at the micro/nanoscale, encompassing diverse applications across multiple disciplines. Despite numerous studies on reducing the size of micro light sources and enhancing optical resolution, the efficient and simple fabrication of ultra-high-resolution micro light sources remains challenging due to its reliance on precise micro-nano processing technology and advanced processing equipment. In this study, a simple approach for the efficient fabrication of submicron light sources is proposed, namely shadow-assisted sidewall emission (SASE) technology. The SASE utilizes the widely adopted UV photolithography process, employing metal shadow modulation to precisely control the emission of light from polymer sidewalls, thereby obtaining photoluminescent light sources with submicron line widths. The SASE eliminates the need for complex and cumbersome manufacturing procedures. The effects of process parameters, including exposure dose, development time, and metal film thickness, on the linewidth of sources are investigated in detail. It is successfully demonstrated red, green, and blue submicron light sources. Finally, their potential application in the field of optical anti-counterfeiting is also demonstrated. We believe that the SASE proposed in this work provides a novel approach for the preparation and application of micro light sources.

1. Introduction

The development and application of microscale light sources have provided unprecedented optical resolution and precision for scientific research, enabling the manipulation of light–matter interactions at the nanoscale [1–3]. This progress not only extends the frontier of optical field control but also establishes a foundation for ultra-high-resolution optical detection, precise light modulation, and the development of novel optical functional devices. With continuous improvements in fabrication techniques, microscale light sources are also evolving toward stability, and tunability, offering new avenues for surpassing the performance limitations of conventional optical devices. The core characteristic of microscale light sources is their ability to generate light output within micron and even submicron spatial ranges, allowing precise control over the interaction region between light and matter, thereby obtaining material information at submicron scales [4–6].

This high-precision control capability is of great significance in various fields, particularly in bioimaging, optogenetics, microspectroscopy, and biomedical applications [7–10]. For instance, in bioimaging, high-resolution microscale light sources enhance super-resolution fluorescence microscopy. Wijesooriya reported that photoactivatable BODIPY probe is used as microscale light sources for single-molecule localization-based super-resolution microscopy. It has been proved to be effective for live-cell imaging and is compatible with various biological samples [11]. In optogenetics, they enable precise stimulation of specific cells, thereby enhancing spatial selectivity and experimental controllability. Dai proposed a new type of tiny multimaterial glass fiber, which allows for simultaneous deep neural stimulation and detection for more than 2 weeks at a single cellular level. The microscale light sources promote the development of neuroscience and brain science through the ability to manipulate neural circuits in the deep brain [12]. Therefore, enhancing the optical resolution of microscale light sources to precisely target smaller spatial scales has always been a major objective in scientific research [13–17].

SinoTechIntel Interactive Document Reader
Page 1–5 of Preview
100%
Download Full PDF

Loading authentic research manuscript (Pages 1–5)...

Sponsored Research Partner
Cite This Research Paper
Junlong Li, Yanmin Guo, Kun Wang, Wei Huang, Hao Su, Wenhao Li, Xiongtu Zhou, Yongai Zhang, Tailiang Guo, Chaoxing Wu (2025). Shadow-Assisted Sidewall Emission for Achieving Submicron Linewidth Light Source by Using Normal UV Photolithography. Nano-Micro Letters. https://doi.org/10.1007/s40820-025-01737-w
SinoTechIntel Academic & Legal Disclaimer

Research & Educational Purpose Only:The translations, structured abstracts, analytical annotations, and data reports provided by SinoTechIntel are intended exclusively for academic research, internal corporate R&D, and educational benchmarking. They do not constitute formal engineering, chemical safety, legal, or professional advice.

Copyright & Intellectual Property Notice: Original copyright of the underlying source articles and experimental data remains with the respective authors, institutions, and original publishing journals. SinoTechIntel claims intellectual property only over its proprietary translations, analytical syntheses, and AEO structured enhancements in accordance with international fair use and academic citation principles.

Frequently Asked Questions

What is shadow-assisted sidewall emission (SASE) technology?

SASE is a novel fabrication method that uses standard UV photolithography and metal shadow modulation to precisely control light emission from polymer sidewalls, enabling the creation of submicron linewidth light sources without complex nanofabrication equipment.

How does SASE achieve submicron linewidths?

By employing metal shadow modulation during UV photolithography, SASE selectively blocks or allows UV exposure to define narrow polymer sidewall regions. The linewidth can be tuned by adjusting exposure dose, development time, and metal film thickness.

What materials are used in the SASE process?

The process utilizes quantum dots (QDs) for photoluminescence, polymer materials for the sidewalls, and metal films for shadow modulation. Red, green, and blue submicron light sources have been demonstrated.

What are the potential applications of SASE-based light sources?

The submicron light sources are scalable and have been proven applicable in optical anti-counterfeiting. They also hold promise for bioimaging, optogenetics, microspectroscopy, and other fields requiring high-resolution light sources.

What are the advantages of SASE over conventional micro/nanofabrication methods?

SASE simplifies the fabrication process by relying on widely available UV photolithography, eliminating the need for expensive and complex equipment such as electron beam lithography or focused ion beam. This makes it more efficient, cost-effective, and accessible for producing submicron light sources.

Recommended Scientific Literature & Research Partners

Related Technical Papers & Translations

Research Paper
Direct Repair of the Crystal Structure and Coating Surface of Spent LiFePO4 Materials Enables Superfast Li-Ion Migration

Direct Repair of the Crystal Structure and Coating Surface of Spent LiFePO4 Materials Enables Superfast Li-Ion Migration

The rapid accumulation of spent LiFePO4 (LFP) cathodes from retired lithium-ion batteries necessitates the development of effective and environmental-friendly recycling strategies. In this context, direct regeneration has emerged as a promising approach for reclaiming LFP cathode materials, offering a streamlined pathway to restore their electrochemical functionality. We report an integrated regeneration protocol that simultaneously repairs the degraded crystal structure and reconstructs the damaged carbon coating in spent LFP. The regenerated cathode material had superfast lithium-ion diffusion kinetics and a stable cathode–electrolyte interface, giving a remarkable rate capability with specific capacities of 122 mAh g−1 at 5C and 106 mAh g−1 at 10C (1C = 170 mA g−1). It also maintained capacities of 110.7 mAh g−1 (5C) and 84.1 mAh g−1 (10C) after 400 cycles. It could be used in harsh environments and could be stably cycled at subzero temperatures (−10 and −20 °C) and in solid-state electrolyte batteries. Life cycle assessment combined with economic evaluation using the EverBatt model reveals that this direct regeneration approach has high economic and environmental benefits.

Read Abstract & PDF
Research Paper
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges

Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges

Oxide semiconductors (OSs), introduced by the Hosono group in the early 2000s, have evolved from display backplane materials to promising candidates for advanced memory and logic devices. The exceptionally low leakage current of OSs and compatibility with three-dimensional (3D) architectures have recently sparked renewed interest in their use in semiconductor applications. This review begins by exploring the unique material properties of OSs, which fundamentally originate from their distinct electronic band structure. Subsequently, we focus on atomic layer deposition (ALD), a core technique for growing excellent OS films, covering both basic and advanced processes compatible with 3D scaling. The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced. Furthermore, material design strategies, such as cation selection, crystallinity control, anion doping, and heterostructure engineering, are discussed. We also highlight challenges in memory applications, including contact resistance, hydrogen instability, and lack of p-type materials, and discuss the feasibility of ALD-grown OSs as potential solutions. Lastly, we provide an outlook on the role of ALD-grown OSs in memory technologies. This review bridges material fundamentals and device-level requirements, offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.

Read Abstract & PDF
Research Paper
Laser powder bed fusion of biodegradable Zn-4Cu alloy: Processing, microstructure and properties

Laser powder bed fusion of biodegradable Zn-4Cu alloy: Processing, microstructure and properties

Zn's natural degradability and biocompatibility make it a promising candidate for implants, however, its mechanical properties remain insufficient for bone applications. In this study, the performance of Zn was enhanced by developing Zn-Cu alloys via laser powder bed fusion (LPBF). Optimal LPBF parameters for forming stable tracks were achieved by adjusting laser power and scanning speed. Under optimized conditions of 100 W and 100 mm/s, high-density (99.58%) Zn-Cu alloys with improved hardness (68.2HV) and yield strength (160 MPa) were achieved. These improvements are attributed to solid solution strengthening, segregation strengthening, and grain refinement. The Zn-Cu alloys also demonstrated favorable degradation behavior, with a rate of 0.16 mm/year. This degradation is primarily driven by micro-galvanic corrosion between the CuZn5 phase and Zn matrix, along with refined grains and increased grain boundary density. This work demonstrates a viable strategy for fabricating Zn-based implants with enhanced structural integrity and mechanical performance via LPBF.

Read Abstract & PDF