Ultrathin van der Waals ferroelectric oxides for scalable low-power memory

• A wafer-scale, ultrathin van der Waals ferroelectric oxide platform is developed via a controlled oxidation strategy, enabling atomically smooth and chemically coherent interfaces. • The ferroelectric oxide retains robust and switchable polarization down to the monolayer limit, as demonstrated by domain writing and erasing. • This approach addresses critical challenges of depolarization fields, interfacial charge trapping, and structural non-uniformity in conventional ferroelectric oxides at atomic thicknesses. • The platform bridges the gap between atomic-scale ferroelectric physics and practical, manufacturable device architectures for low-power memory and computing-in-memory applications.