SinoTechIntel Academic Portal
Open AccessDOI: 10.1007/s40820-025-01750-zOriginal Research

Ultra-Broadband and Ultra-High Electromagnetic Interference Shielding Performance of Aligned and Compact MXene Films

Weiqiang Huang¹,Xuebin Liu¹,Yunfan Wang¹,Jiyong Feng¹,Junhua Huang¹,Zhenxi Dai¹,Shaodian Yang¹,Songfeng Pei¹,Jing Zhong¹,Xuchun Gui¹

State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University

Read Executive PreviewQuick FAQ
Ultra-Broadband and Ultra-High Electromagnetic Interference Shielding Performance of Aligned and Compact MXene Films
Graphical Abstract / Figure
Published In
Nano-Micro Letters
Published:April 27, 2025Edition:Vol. 17, Issue 1 • pp. 234Citation:Weiqiang Huang et al. (2025), Nano-Micro Letters
Impact FactorPeer-Reviewed Core
Source JournalNano-Micro Letters
Sponsored Research Partner
Keywords & Index Terms:MXene filmElectromagnetic interference shieldingInfrared stealthElectrical heaterBroadband shieldingTerahertz shieldingSpecific shielding effectivenessCentrifugal spraying

Key Takeaways & Executive Findings

  • • A highly aligned and compact MXene film fabricated by continuous centrifugal spraying achieves ultra-broadband EMI shielding from GHz to THz bands. • The film exhibits record-high specific shielding effectiveness of 1.545 × 10^6 dB cm2 g−1, surpassing previously reported shielding films. • Ultra-low infrared emissivity (0.1) in the 2.5–16.0 μm range enables effective infrared stealth for day/night applications. • Efficient electrothermal performance (saturated temperature >120 °C at 1.0 V, heating rate 4.4 °C s−1) offers multifunctional protection.
Sponsored Research Highlight

Abstract

With the rapid development of electronic detective techniques, there is an urgent need for broadband (from microwave to infrared) stealth of aerospace equipment. However, achieving effective broadband stealth primarily relies on the composite of multi-layer coatings of different materials, while realizing broadband stealth with a single material remains a significant challenge. Herein, we reported a highly compact MXene film with aligned nanosheets through a continuous centrifugal spraying strategy. The film exhibits an exceptional electromagnetic interference shielding effectiveness of 45 dB in gigahertz band (8.2–40 GHz) and 59 dB in terahertz band (0.2–1.6 THz) at a thickness of 2.25 μm, owing to the high conductivity (1.03 × 10^6 S m−1). Moreover, exceptionally high specific shielding effectiveness of 1.545 × 10^6 dB cm2 g−1 has been demonstrated by the film, which is the highest value reported for shielding films. Additionally, the film exhibits an ultra-low infrared emissivity of 0.1 in the wide-range infrared band (2.5–16.0 μm), indicating its excellent infrared stealth performance for day-/nighttime outdoor environments. Moreover, the film demonstrates efficient electrothermal performance, including a high saturated temperature (over 120 °C at 1.0 V), a high heating rate (4.4 °C s−1 at 1.0 V), and a stable and uniform heating distribution. Therefore, this work provides a promising strategy for protecting equipment from multispectral electromagnetic interference and inhibiting infrared detection.

1. Introduction

The development of security inspections and aerospace equipment has created an urgent demand for broadband stealth technologies, including those in the gigahertz (GHz), terahertz (THz), infrared (IR), and ultraviolet (UV) bands [1–11]. Recently, numerous stealth materials have been reported. For instance, multi-walled carbon nanotubes (MWCNTs)/silver nanowires (Ag NWs) composite exhibits an electromagnetic interference shielding effectiveness (EMI SE) exceeding 45 dB in the range of 4–40 GHz [12]. Hollow metal-organic frameworks composite films exhibit EMI SE of 66.8 dB in the Ka-band (26.5–40 GHz) and 114.6 dB in the range of 0.1–4.0 THz [13]. CNT films present an EMI SE with an absorption effectiveness ratio of 86.9% and an infrared emissivity value of 0.331 [14]. Ti3C2Tx/polyvinyl alcohol (PVA) films can shield nearly 90% UV light [15]. However, different electromagnetic wavebands exhibit distinct shielding mechanisms [16–22]; therefore, necessarily complex structures and materials are generally required to achieve effective shielding and stealth across a wide frequency range. Currently, realizing ultra-broadband electromagnetic shielding performance using a single-material structure remains a significant challenge.

Titanium carbide (Ti3C2Tx) MXene, an emerging two-dimensional (2D) transition metal carbide, exhibits low infrared emissivity [23–27], superior electromagnetic wave absorption capacity, and shielding efficiency, primarily attributed to its abundant surface groups and high conductivity [28–30]. Recently, there has been growing interest in assembling MXene flakes into high-performance macroscopic films, driven by their promising applications in EMI shielding [31–36]. To fully leverage the advantages of MXene for electromagnetic shielding, it is crucial to achieve the alignment and compactness of nanosheets, which can enhance conductivity and mechanical properties. In this work, we report a continuous centrifugal spraying strategy to fabricate highly aligned and compact MXene films, demonstrating exceptional EMI shielding performance across GHz, THz, and IR bands, along with efficient electrothermal heating capability.

SinoTechIntel Interactive Document Reader
Page 1–5 of Preview
100%
Download Full PDF

Loading authentic research manuscript (Pages 1–5)...

Sponsored Research Partner
Cite This Research Paper
Weiqiang Huang, Xuebin Liu, Yunfan Wang, Jiyong Feng, Junhua Huang, Zhenxi Dai, Shaodian Yang, Songfeng Pei, Jing Zhong, Xuchun Gui (2025). Ultra-Broadband and Ultra-High Electromagnetic Interference Shielding Performance of Aligned and Compact MXene Films. Nano-Micro Letters. https://doi.org/10.1007/s40820-025-01750-z
SinoTechIntel Academic & Legal Disclaimer

Research & Educational Purpose Only:The translations, structured abstracts, analytical annotations, and data reports provided by SinoTechIntel are intended exclusively for academic research, internal corporate R&D, and educational benchmarking. They do not constitute formal engineering, chemical safety, legal, or professional advice.

Copyright & Intellectual Property Notice: Original copyright of the underlying source articles and experimental data remains with the respective authors, institutions, and original publishing journals. SinoTechIntel claims intellectual property only over its proprietary translations, analytical syntheses, and AEO structured enhancements in accordance with international fair use and academic citation principles.

Frequently Asked Questions

What is the maximum EMI shielding effectiveness achieved by the MXene film?

The MXene film exhibits an EMI SE of 45 dB in the gigahertz band (8.2–40 GHz) and 59 dB in the terahertz band (0.2–1.6 THz) at a thickness of 2.25 μm.

How does the MXene film achieve ultra-broadband shielding?

The film's high electrical conductivity (1.03 × 10^6 S m−1) and aligned, compact nanosheet structure enable efficient reflection and absorption of electromagnetic waves across a wide frequency range, from GHz to THz.

What is the specific shielding effectiveness of the film?

The film demonstrates an exceptionally high specific shielding effectiveness of 1.545 × 10^6 dB cm2 g−1, which is the highest value reported for shielding films to date.

Does the film provide infrared stealth capability?

Yes, the film exhibits an ultra-low infrared emissivity of 0.1 in the 2.5–16.0 μm range, making it effective for infrared stealth in both day and night outdoor environments.

What are the electrothermal performance characteristics of the film?

The film shows efficient electrothermal performance with a high saturated temperature (over 120 °C at 1.0 V), a high heating rate (4.4 °C s−1 at 1.0 V), and stable, uniform heating distribution.

Recommended Scientific Literature & Research Partners

Related Technical Papers & Translations

Research Paper
Direct Repair of the Crystal Structure and Coating Surface of Spent LiFePO4 Materials Enables Superfast Li-Ion Migration

Direct Repair of the Crystal Structure and Coating Surface of Spent LiFePO4 Materials Enables Superfast Li-Ion Migration

The rapid accumulation of spent LiFePO4 (LFP) cathodes from retired lithium-ion batteries necessitates the development of effective and environmental-friendly recycling strategies. In this context, direct regeneration has emerged as a promising approach for reclaiming LFP cathode materials, offering a streamlined pathway to restore their electrochemical functionality. We report an integrated regeneration protocol that simultaneously repairs the degraded crystal structure and reconstructs the damaged carbon coating in spent LFP. The regenerated cathode material had superfast lithium-ion diffusion kinetics and a stable cathode–electrolyte interface, giving a remarkable rate capability with specific capacities of 122 mAh g−1 at 5C and 106 mAh g−1 at 10C (1C = 170 mA g−1). It also maintained capacities of 110.7 mAh g−1 (5C) and 84.1 mAh g−1 (10C) after 400 cycles. It could be used in harsh environments and could be stably cycled at subzero temperatures (−10 and −20 °C) and in solid-state electrolyte batteries. Life cycle assessment combined with economic evaluation using the EverBatt model reveals that this direct regeneration approach has high economic and environmental benefits.

Read Abstract & PDF
Research Paper
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges

Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges

Oxide semiconductors (OSs), introduced by the Hosono group in the early 2000s, have evolved from display backplane materials to promising candidates for advanced memory and logic devices. The exceptionally low leakage current of OSs and compatibility with three-dimensional (3D) architectures have recently sparked renewed interest in their use in semiconductor applications. This review begins by exploring the unique material properties of OSs, which fundamentally originate from their distinct electronic band structure. Subsequently, we focus on atomic layer deposition (ALD), a core technique for growing excellent OS films, covering both basic and advanced processes compatible with 3D scaling. The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced. Furthermore, material design strategies, such as cation selection, crystallinity control, anion doping, and heterostructure engineering, are discussed. We also highlight challenges in memory applications, including contact resistance, hydrogen instability, and lack of p-type materials, and discuss the feasibility of ALD-grown OSs as potential solutions. Lastly, we provide an outlook on the role of ALD-grown OSs in memory technologies. This review bridges material fundamentals and device-level requirements, offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.

Read Abstract & PDF
Research Paper
Laser powder bed fusion of biodegradable Zn-4Cu alloy: Processing, microstructure and properties

Laser powder bed fusion of biodegradable Zn-4Cu alloy: Processing, microstructure and properties

Zn's natural degradability and biocompatibility make it a promising candidate for implants, however, its mechanical properties remain insufficient for bone applications. In this study, the performance of Zn was enhanced by developing Zn-Cu alloys via laser powder bed fusion (LPBF). Optimal LPBF parameters for forming stable tracks were achieved by adjusting laser power and scanning speed. Under optimized conditions of 100 W and 100 mm/s, high-density (99.58%) Zn-Cu alloys with improved hardness (68.2HV) and yield strength (160 MPa) were achieved. These improvements are attributed to solid solution strengthening, segregation strengthening, and grain refinement. The Zn-Cu alloys also demonstrated favorable degradation behavior, with a rate of 0.16 mm/year. This degradation is primarily driven by micro-galvanic corrosion between the CuZn5 phase and Zn matrix, along with refined grains and increased grain boundary density. This work demonstrates a viable strategy for fabricating Zn-based implants with enhanced structural integrity and mechanical performance via LPBF.

Read Abstract & PDF