• 2D materials offer atomic thickness and maintain carrier mobility at sub-5 nm, overcoming the limitations of bulk Si in advanced nodes.
• They enable superior gate electrostatic control, mitigating short channel effects and reducing power consumption in ICs.
• Recent breakthroughs include contact engineering, dielectric integration, and full-functioned processors, demonstrating potential for large-scale integration.
• Challenges remain in producing large-scale, high-quality 2D materials and developing mature fabrication techniques for commercial VLSI.
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