Structural Influence on Radiation-induced Single-event Effects in SiC MOSFETs: Comparative Analysis of Planar and Trench Designs

• The gate oxide region is the most sensitive position in planar SiC MOSFETs under heavy-ion irradiation. • Trench and double-trench structures do not exhibit localized sensitive regions, indicating different failure mechanisms. • Single-event susceptibility shows strong depth dependence, with greater vulnerability at deeper ion penetration depths. • TCAD simulations provide comparative insights into the structural influence on single-event effects, guiding radiation-hardened design.