Key Takeaways & Executive Findings
- •• The gate oxide region is the most sensitive position in planar SiC MOSFETs under heavy-ion irradiation. • Trench and double-trench structures do not exhibit localized sensitive regions, indicating different failure mechanisms. • Single-event susceptibility shows strong depth dependence, with greater vulnerability at deeper ion penetration depths. • TCAD simulations provide comparative insights into the structural influence on single-event effects, guiding radiation-hardened design.
Abstract
The single-event susceptibility of three silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices structures (planar, trench and double trench) is researched by the technology computer-aided design (TCAD) simulation. Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics. The gate oxide region is identified as the most sensitive position in planar devices, while trench and double-trench structures exhibit no localized sensitive regions. Furthermore, the single-event susceptibility demonstrates strong depth dependence across all three structures, with enhanced vulnerability observed at greater ion penetration depths.
1. Introduction
For its superior material and device properties, silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) power devices have become one of the most promising power switches in space power systems[1-4]. However, SiC MOSFETs in space environments are predominantly susceptible to heavy-ion-induced single-event problem, primarily manifested as catastrophic failure modes such as single-event burnout (SEB) and single-event gate rupture (SEGR)[5-9].
Current research predominantly focuses on failure mechanisms and reinforcement designs of planar SiC MOSFET structures, utilizing the technology computer-aided design (TCAD) simulations and experiments to conduct field-based mechanism analysis and damage investigation: Using microbeam experiments, Martinella et al.[10] demonstrated that low drain bias induces gradual drain current degradation while high VDS triggers abrupt leakage escalation pivotal for SEB understanding in SiC VDMOS. Complementary work by Zhou et al.[11] correlated heavy-ion irradiation data with transient TCAD modeling to decouple the dynamics of gate oxide damage during single-event effects (SEE). However, only a few studies have explored the relationship between the susceptibility and the position of heavy-ion strikes, existing research remains restricted to single structures like SiC UMOSFETs without conducting cross-architectural vulnerability assessments[12-14]. More importantly, no comprehensive research has been conducted on the correlation between the single-event susceptibility of SiC MOSFET devices with varying structures and the position and depth of heavy-ion strike, especially the structural comparative analysis for planar, trench, and double-trench.
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HU Libin, FENG Shaohui, SUI Chenglong, WANG Chengjie, CHEN Miao, LU Peng, YANG Can, SHU Lei, LU Jiang, LI Bo (2025). Structural Influence on Radiation-induced Single-event Effects in SiC MOSFETs: Comparative Analysis of Planar and Trench Designs. SinoTechIntel Verified Research. https://doi.org/10.7538/yzk.2025.youxian.0449
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Frequently Asked Questions
What are the main findings of the study on SiC MOSFET structures?
The study found that the gate oxide region is the most sensitive to single-event effects in planar SiC MOSFETs, while trench and double-trench structures do not show localized sensitive regions. Additionally, all structures exhibit increased susceptibility at greater ion penetration depths.
How was the single-event susceptibility of SiC MOSFETs evaluated?
The susceptibility was evaluated using technology computer-aided design (TCAD) simulations, comparing the transient responses of planar, trench, and double-trench SiC MOSFET power devices under heavy-ion irradiation.
Which device structures were compared in this research?
The research compared three SiC MOSFET power device structures: planar, trench, and double-trench, all rated at 1200 V.
What are the implications of this study for radiation-hardened design?
The findings provide comparative insights into how different structural designs influence single-event susceptibility, guiding the development of next-generation radiation-hardened SiC power MOSFETs.
What is the significance of the depth dependence observed in the study?
The depth dependence indicates that single-event effects are more severe when heavy ions penetrate deeper into the device, which is crucial for understanding failure mechanisms and designing effective shielding or hardening strategies.
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