Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation

• RA-JTE edge termination shows less than 1% breakdown voltage variation under 45 MeV proton irradiation up to 1×10^14 cm^-2, demonstrating superior radiation hardness. • MFZ-JTE and FLR structures exhibit breakdown voltage shifts of 6.1% and 15.2% respectively at the highest fluence, indicating higher susceptibility to TID effects. • TCAD simulations corroborate experimental findings, attributing RA-JTE's robustness to effective electric field redistribution by multiple P+ rings. • The study provides practical design guidance for radiation-hardened SiC power devices intended for space and high-radiation environments.