Key Takeaways & Executive Findings
- •• RA-JTE edge termination shows less than 1% breakdown voltage variation under 45 MeV proton irradiation up to 1×10^14 cm^-2, demonstrating superior radiation hardness. • MFZ-JTE and FLR structures exhibit breakdown voltage shifts of 6.1% and 15.2% respectively at the highest fluence, indicating higher susceptibility to TID effects. • TCAD simulations corroborate experimental findings, attributing RA-JTE's robustness to effective electric field redistribution by multiple P+ rings. • The study provides practical design guidance for radiation-hardened SiC power devices intended for space and high-radiation environments.
Abstract
This work presents a systematic analysis of proton-induced total ionizing dose (TID) effects in 1.2 kV silicon carbide (SiC) power devices with various edge termination structures. Three edge terminations including ring-assisted junction termination extension (RA-JTE), multiple floating zone JTE (MFZ-JTE), and field limiting rings (FLR) were fabricated and irradiated with 45 MeV protons at fluences ranging from 1 × 10^12 to 1 × 10^14 cm^-2. Experimental results, supported by TCAD simulations, show that the RA-JTE structure maintained stable breakdown performance with less than 1% variation due to its effective electric field redistribution by multiple P+ rings. In contrast, MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1% and 15.2%, respectively, under the highest fluence. These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened SiC power devices in space and other high-radiation environments.
1. Introduction
The advancement of aerospace and satellite technologies has increased the demand for radiation-hardened power semiconductor devices capable of reliable operation in harsh cosmic environments. These environments expose devices to total ionizing dose (TID), displacement damage, and single-event effects caused by high-energy particles such as protons and heavy ions. Silicon carbide (SiC), with its wide bandgap, high critical electric field, and excellent thermal conductivity, is widely regarded as a promising material for radiation-tolerant power electronics.
Although TID effects in SiC power devices have been widely reported, most studies have focused on threshold voltage shifts and oxide degradation in MOSFET structures. The effects of TID on edge termination structures, which directly determine the breakdown characteristics of high-voltage devices, have not been sufficiently characterized.
The objective of this study is to evaluate the susceptibility of different edge termination structures in SiC power devices to TID-induced degradation under proton irradiation. In conventional SiC MOSFETs, the presence of gate pads, bus lines, and active cell regions complicates the isolation of radiation effects specific to edge terminations.
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Sangyeob Kim, Jeongtae Kim, Dong-Seok Kim, Hyuncheol Bae, Min-Woo Ha, Ogyun Seok (2025). Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25040023
Research & Educational Purpose Only:The translations, structured abstracts, analytical annotations, and data reports provided by SinoTechIntel are intended exclusively for academic research, internal corporate R&D, and educational benchmarking. They do not constitute formal engineering, chemical safety, legal, or professional advice.
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Frequently Asked Questions
What is the main finding of this study on SiC power devices?
The study demonstrates that the ring-assisted junction termination extension (RA-JTE) structure exhibits superior radiation hardness under proton irradiation, with less than 1% variation in breakdown voltage, compared to other edge terminations.
How does proton irradiation affect different edge termination structures?
Proton irradiation causes breakdown voltage shifts of 6.1% for multiple floating zone JTE (MFZ-JTE) and 15.2% for field limiting rings (FLR) at the highest fluence, while RA-JTE remains stable.
What is the significance of TCAD simulations in this research?
TCAD simulations support experimental results by explaining that RA-JTE's robustness is due to effective electric field redistribution by multiple P+ rings, providing insight into the underlying mechanisms.
Why is SiC considered a promising material for radiation-hardened devices?
SiC has a wide bandgap, high critical electric field, and excellent thermal conductivity, making it suitable for reliable operation in harsh radiation environments such as space.
What practical guidance does this study offer for device design?
The study suggests that RA-JTE edge termination is a preferred design for radiation-hardened SiC power devices intended for space and other high-radiation applications.
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