• Oxide semiconductors (OSs) are emerging as promising channel materials for high-density, low-power next-generation memory applications due to their exceptionally low leakage current and compatibility with 3D architectures.
• Atomic layer deposition (ALD) enables precise control of film growth and material design, including cation selection, crystallinity control, anion doping, and heterostructure engineering, to optimize OS performance.
• Key challenges for integrating OSs into memory devices include contact resistance, hydrogen instability, and the lack of p-type materials, which ALD-grown OSs may help address.
• This review bridges material fundamentals and device-level requirements, offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.