• Wide-bandgap semiconductors host stable color centers that emit single photons at room temperature, making them prime candidates for scalable quantum photonic devices.
• Diamond NV centers, despite their excellent spin properties, suffer from broad emission and low luminescence, prompting exploration of alternative wide-bandgap materials.
• Recent SPE demonstrations span diverse materials including SiC, GaN, AlN, h-BN, ZnO, and β-Ga2O3, each offering unique spectral and integration advantages.
• Compatibility with mature semiconductor fabrication enables direct integration of these SPEs into practical optoelectronic systems for quantum information technologies.