Key Takeaways & Executive Findings
- •• Wide-bandgap semiconductors host stable color centers that emit single photons at room temperature, making them prime candidates for scalable quantum photonic devices. • Diamond NV centers, despite their excellent spin properties, suffer from broad emission and low luminescence, prompting exploration of alternative wide-bandgap materials. • Recent SPE demonstrations span diverse materials including SiC, GaN, AlN, h-BN, ZnO, and β-Ga2O3, each offering unique spectral and integration advantages. • Compatibility with mature semiconductor fabrication enables direct integration of these SPEs into practical optoelectronic systems for quantum information technologies.
Abstract
Single-photon sources are essential components for scalable quantum information technologies, with applications spanning quantum communication, quantum key distribution, quantum computing, and quantum sensing. Color centers in the solid state, such as optically active point defects, are promising candidates for the next-generation single-photon sources. Their atom-like properties enable the emission of single photons with high efficiency, purity, and indistinguishability, while their solid-state nature allows for integration into scalable quantum photonic devices. Among these, color centers in wide-bandgap semiconductors stand out as exceptionally promising single-photon emitters (SPEs), owing to their stable room-temperature (or higher) operation and wide spectral tunability. Furthermore, their compatibility with mature semiconductor technology facilitates direct integration into practical optoelectronic systems. In recent years, such defect-based SPEs have been realized in a variety of wide-bandgap semiconductors, including diamond, silicon carbide (SiC), silicon nitride (Si3N4), gallium nitride (GaN), aluminum nitride (AlN), hexagonal boron nitride (h-BN), zinc oxide (ZnO), and beta-phase gallium oxide (β-Ga2O3). This mini-review summarizes recent progress in SPEs based on wide-bandgap semiconductors and discusses their potential for integrated quantum photonic circuits.
1. Introduction
Single-photon sources are essential components for scalable quantum information technologies, with applications spanning quantum communication, quantum key distribution, quantum computing, and quantum sensing. Color centers in the solid state, such as optically active point defects, are promising candidates for the next-generation single-photon sources. Their atom-like properties enable the emission of single photons with high efficiency, purity, and indistinguishability, while their solid-state nature allows for integration into scalable quantum photonic devices.
Among these, color centers in wide-bandgap semiconductors stand out as exceptionally promising single-photon emitters (SPEs), owing to their stable room-temperature (or higher) operation and wide spectral tunability. Furthermore, their compatibility with mature semiconductor technology facilitates direct integration into practical optoelectronic systems. In recent years, such defect-based SPEs have been realized in a variety of wide-bandgap semiconductors, including diamond, silicon carbide (SiC), silicon nitride (Si3N4), gallium nitride (GaN), aluminum nitride (AlN), hexagonal boron nitride (h-BN), zinc oxide (ZnO), and beta-phase gallium oxide (β-Ga2O3). This mini-review summarizes recent progress in SPEs based on wide-bandgap semiconductors and discusses their potential for integrated quantum photonic circuits.
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MENG Junhua, SHI Yiming, ZHANG Xingwang (2026). Material platforms for solid-state single-photon sources: wide bandgap semiconductors. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/26020003
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Frequently Asked Questions
What are the key advantages of wide-bandgap semiconductors for single-photon sources?
Wide-bandgap semiconductors offer stable room-temperature operation, wide spectral tunability, and compatibility with mature semiconductor fabrication, making them ideal for scalable quantum photonic devices.
Which materials are discussed in this review for single-photon emitters?
The review covers diamond, silicon carbide (SiC), silicon nitride (Si3N4), gallium nitride (GaN), aluminum nitride (AlN), hexagonal boron nitride (h-BN), zinc oxide (ZnO), and beta-phase gallium oxide (β-Ga2O3).
What are the limitations of diamond NV centers mentioned in the text?
Diamond NV centers suffer from broad emission spectra and relatively low luminescence intensity due to strong interaction with lattice phonons, which hinders generation of indistinguishable photons in integrated circuits.
What is the significance of this mini-review?
It summarizes recent progress in single-photon emitters based on wide-bandgap semiconductors and discusses their potential for integrated quantum photonic circuits, providing a comprehensive overview for researchers.
How do color centers in wide-bandgap semiconductors compare to other solid-state single-photon sources?
They offer atom-like properties with high efficiency, purity, and indistinguishability, along with the stability and integration advantages of solid-state platforms, making them exceptionally promising for next-generation quantum technologies.
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