Influencing factors of noise characteristics in EBCMOS with uniformly doped P-type substrates

• A physical computational model was established to relate the electron-multiplication layer to noise characteristics in uniformly doped P-type substrate EBCMOS chips. • Optimization of passivation layer (Al2O3, 15 nm) and substrate temperature (260 K) significantly improves noise performance. • Decreasing P-substrate doping concentration and thickness, while increasing incident electron energy, enhances SNR. • Dark current noise, primarily governed by interfacial defects, has a substantial impact on overall device noise characteristics.