Key Takeaways & Executive Findings
- •• A physical computational model was established to relate the electron-multiplication layer to noise characteristics in uniformly doped P-type substrate EBCMOS chips. • Optimization of passivation layer (Al2O3, 15 nm) and substrate temperature (260 K) significantly improves noise performance. • Decreasing P-substrate doping concentration and thickness, while increasing incident electron energy, enhances SNR. • Dark current noise, primarily governed by interfacial defects, has a substantial impact on overall device noise characteristics.
Abstract
In this study, with the aim of achieving a high signal-to-noise ratio (SNR) in an electron-bombarded complementary metal−oxide−semiconductor (EBCMOS) imaging chip, we analyzed the sources of noise using principles from low-light-level imaging and semiconductor theory, and established a physical computational model that relates the electron-multiplication layer to the noise characteristics of an EBCMOS chip in a uniformly doped structure with a P-type substrate. We conducted theoretical calculations to analyze the effects on noise characteristics of the passivation layer material and thickness, P-substrate doping concentration, P-substrate thickness, incident electron energy, and substrate temperature. By comparing the characteristics of pixel noise, dark current, multiplication electron numbers, and SNR under various structures, we simulated optimized structural parameters of the device. Our simulation results showed that the noise characteristics of the device could be optimized using an Al2O3 passivation thickness of 15 nm and substrate temperature of 260 K, and by decreasing the doping concentration and thickness of the P-type substrate and increasing the incident electron energy. The optimized SNR were 252 e/e. And the substantial impact of dark current noise, primarily governed by interfacial defects, on the overall noise characteristics of the device. This research offers theoretical support to develop EBCMOS imaging chips with high gain and SNR.
1. Introduction
Electron-bombarded complementary metal−oxide−semiconductor (EBCMOS) chips have emerged as digital low-light-level imaging devices capable of digitizing targets under extremely low-light-level conditions[1, 2]. Relative to traditional counterparts such as intensified charge-coupled devices (ICCDs), EBCMOS chips feature smaller sensor dimensions and weight, improved sensitivity and dynamic range, accelerated response speed, and superior contrast and resolution[3, 4].
For digital low-light imaging devices, the minimum imageable illuminance is a critical performance metric and a key parameter that reflects their application advantages. It is typically classified into low illuminance (approximately 10−2 to 10−3 lx) and ultra-low illuminance (approximately 10−4 to 10−5 lx) ranges[5]. Currently, among mainstream digital low-light imaging devices, sCMOS and EMCCD (electron multiplying CCD) are primarily suitable for imaging under low-illumination conditions; whereas ICCD, EBCCD (electron bombarded CCD) are used for ultra-low-light-level applications.
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Xinyue He, Gangcheng Jiao, Hongchang Cheng, Tianjiao Lu, Ye Li, De Song, Weijun Chen (2025). Influencing factors of noise characteristics in EBCMOS with uniformly doped P-type substrates. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25030039
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Frequently Asked Questions
What is EBCMOS and how does it work?
EBCMOS (Electron-Bombarded Complementary Metal-Oxide-Semiconductor) is a digital low-light-level imaging device that converts photons to electrons, which are then accelerated and bombarded onto a CMOS sensor to achieve high gain. It offers advantages such as compact size, high sensitivity, and fast response compared to traditional ICCDs.
What are the main sources of noise in EBCMOS devices?
The main sources of noise in EBCMOS devices include dark current noise, shot noise, and readout noise. Dark current noise, primarily governed by interfacial defects, has a substantial impact on the overall noise characteristics.
How can the noise characteristics of EBCMOS be optimized?
The noise characteristics can be optimized by using an Al2O3 passivation layer of 15 nm thickness, operating at a substrate temperature of 260 K, decreasing the doping concentration and thickness of the P-type substrate, and increasing the incident electron energy.
What is the significance of the SNR in EBCMOS?
The signal-to-noise ratio (SNR) is a critical metric for image quality. A higher SNR indicates better image quality with less noise. The optimized SNR achieved in this study was 252 e/e, demonstrating the potential for high-performance EBCMOS imaging.
What are the key findings of this study?
The study established a physical model to analyze noise sources in EBCMOS, identified optimal structural parameters (Al2O3 thickness 15 nm, temperature 260 K, lower doping and thickness, higher electron energy), and highlighted the dominant role of dark current noise from interfacial defects.
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