In-situ grown 1D Te/2D Bi2O2Se van der Waals heterostructure for high-performance self-powered polarization-sensitive photodetection

• • The Te/Bi2O2Se heterojunction photodetector achieves a responsivity of ~0.89 A·W−1 under 1550 nm irradiation in self-powered mode, enabling efficient detection without external bias, which is critical for low-power infrared sensing systems. • • The device exhibits a fast response time of ~29/41 μs (rise/fall), facilitating high-speed optical communication and imaging applications where rapid signal acquisition is essential. • • A high polarization ratio of 2.8 is achieved due to the intrinsic optical anisotropy of tellurium, allowing polarization-sensitive detection for applications such as ellipsometry, remote sensing, and secure optical communications. • • The heterojunction is fabricated via a two-step chemical vapor deposition method, ensuring a clean interface and type-II band alignment, which is essential for efficient charge separation and high detectivity in mixed-dimensional vdW heterostructures.