Flexible ITO TFTs with high mobility of 39.1 cm2·V−1·s−1 and excellent uniformity fabricated via mass-production compatible process

• First demonstration of ITO TFTs on flexible substrates with high average mobility of 39.1 cm2·V−1·s−1. • Mass-production compatible process using SiO2 gate dielectric and PI substrate with ultra-flat surface and low CTE. • Excellent large-scale uniformity and mechanical flexibility: minor mobility variation of −5.5% and threshold voltage shift of +0.45 V at 7 mm bending radius. • Robust bending durability: fully functional after 13,000 dynamic bending cycles with no significant degradation.