Key Takeaways & Executive Findings
- •• First demonstration of ITO TFTs on flexible substrates with high average mobility of 39.1 cm2·V−1·s−1. • Mass-production compatible process using SiO2 gate dielectric and PI substrate with ultra-flat surface and low CTE. • Excellent large-scale uniformity and mechanical flexibility: minor mobility variation of −5.5% and threshold voltage shift of +0.45 V at 7 mm bending radius. • Robust bending durability: fully functional after 13,000 dynamic bending cycles with no significant degradation.
Abstract
The increasing pursuit of ultra-high resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed indium tin oxide (ITO) TFTs on flexible substrates for the first time and achieved a remarkable average mobility of 39.1 cm2·V−1·s−1, via mass-production compatible processes utilizing SiO2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent large-scale uniformity. Additionally, the TFTs generate minor variations of −5.5% and +0.45 V in mobility and threshold voltage under a bending radius of 7 mm, respectively. They stay fully functional even after a dynamic bending test up to 13 000 cycles, observing no obvious degradation in mobility and threshold voltage. The reliable mechanical flexibility and robust bending durability demonstrate their great potential for ultra-high resolution flexible displays in the future.
1. Introduction
The InGaZnO (IGZO) thin film transistors (TFTs) have been successfully commercialized in displays, offering advantages of low off-current, good process compatibility, and large-area uniformity[1−3]. As the demand for intelligent and portable electronics continues to escalate, next-generation flexible displays with ultra-high resolution are becoming increasingly crucial for emerging applications in wearable devices, smartphones, augmented reality systems, and naked-eye 3D technologies[4−8]. This trend necessitates the development of TFTs with higher mobility, especially on flexible substrates [9−11]. Nevertheless, conventional IGZO TFTs typically demonstrate limited carrier mobility (~10 cm2·V−1·s−1), which constrains further improvements in display driving current and resolution.
Recently, two types of emerging materials have been developed to improve TFTs’ mobility, including indium-rich amorphous oxide semiconductors (AOS) and two-dimensional 2D materials[12−16]. Despite the high inherent mobility of 2D materials, their mobility is [truncated]
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Zuoxu Yu, Yuzhen Zhang, Tingrui Huang, Wenting Xu, Mingming Liu, Di Gui, Kaizhi Sui, Guangan Yang, Weifeng Sun, Runxiao Shi, Wangran Wu (2025). Flexible ITO TFTs with high mobility of 39.1 cm2·V−1·s−1 and excellent uniformity fabricated via mass-production compatible process. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25060021
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Frequently Asked Questions
What is the key achievement of this research?
The research demonstrates flexible ITO TFTs with a high average mobility of 39.1 cm2·V−1·s−1, fabricated via a mass-production compatible process, marking the first successful development of ITO TFTs on flexible substrates.
How do the ITO TFTs perform under mechanical bending?
The ITO TFTs exhibit minor variations of −5.5% in mobility and +0.45 V in threshold voltage at a bending radius of 7 mm, and remain fully functional after 13,000 dynamic bending cycles with no significant degradation.
What substrate is used and why is it beneficial?
A polyimide (PI) substrate with an ultra-flat surface and extremely low coefficient of thermal expansion (CTE) is used, which contributes to excellent large-scale uniformity of the TFTs.
What is the significance of using SiO2 as the gate dielectric?
The use of SiO2 gate dielectric is part of a mass-production compatible process, enabling the fabrication of high-performance ITO TFTs on flexible substrates with high mobility and uniformity.
What are the potential applications of these ITO TFTs?
The reliable mechanical flexibility and robust bending durability of these ITO TFTs demonstrate their great potential for ultra-high resolution flexible displays in future wearable devices, smartphones, augmented reality systems, and naked-eye 3D technologies.
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