• In-doped α-Ga2O3 nanowire arrays were successfully fabricated via a hydrothermal method, achieving a reduced bandgap and enhanced UV absorption.
• The In-doped photodetector exhibited a high responsivity of 38.85 mA/W under 255 nm illumination, approximately three times higher than undoped α-Ga2O3.
• The device demonstrated fast response and recovery times of 13 ms and 8 ms, respectively, enabling self-powered operation.
• The superior performance of In-doped α-Ga2O3 enabled the development of a photoelectric imaging system, showcasing practical optoelectronic applications.