Key Takeaways & Executive Findings
- •• In-doped α-Ga2O3 nanowire arrays were successfully fabricated via a hydrothermal method, achieving a reduced bandgap and enhanced UV absorption. • The In-doped photodetector exhibited a high responsivity of 38.85 mA/W under 255 nm illumination, approximately three times higher than undoped α-Ga2O3. • The device demonstrated fast response and recovery times of 13 ms and 8 ms, respectively, enabling self-powered operation. • The superior performance of In-doped α-Ga2O3 enabled the development of a photoelectric imaging system, showcasing practical optoelectronic applications.
Abstract
Low power consumption, high responsivity, and self-powering are key objectives for photoelectrochemical ultraviolet detectors. In this research, In-doped α-Ga2O3 nanowire arrays were fabricated on fluorine-doped tin oxide (FTO) substrates through a hydrothermal approach, with subsequent thermal annealing. These arrays were then used as photoanodes to construct a ultraviolet (UV) photodetector. In doping reduced the bandgap of α-Ga2O3, enhancing its absorption of UV light. Consequently, the In-doped α-Ga2O3 nanowire arrays exhibited excellent light detection performance. When irradiated by 255 nm deep ultraviolet light, they obtained a responsivity of 38.85 mA/W. Moreover, the detector's response and recovery times are 13 and 8 ms, respectively. The In-doped α-Ga2O3 nanowire arrays exhibit a responsivity that is about three-fold higher than the undoped one. Due to its superior responsivity, the In-doped device was used to develop a photoelectric imaging system. This study demonstrates that doping α-Ga2O3 nanowire with indium is a potent approach for optimizing their photoelectrochemical performance, which also has significant potential for optoelectronic applications.
1. Introduction
Extensive investigations have been conducted on ultraviolet (UV) detectors because of their broad applications in environmental monitoring, gas sensing, medical diagnostics, and military early warning systems. Among ultraviolet detectors, solid-state UV detectors require complex fabrication processes and additional driving voltages for operation, and their relatively slow response times severely limit their practical applications.
Photoelectrochemical (PEC) UV detectors, on the other hand, are attracting growing interest as photovoltaic devices owing to their low cost, simplicity in fabrication, and remarkable self-powering capabilities. In addition to the physical processes of charge carrier separation and transport, PEC UV detectors are also associated with interfacial chemical reactions, where different electrolytes offer more avenues for performance modulation.
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Junjun Xue, Jiyuan Huang, Kehan Li, Ping Liu, Yan Gu, Ting Zhi, Yan Dong, Jin Wang (2025). Boosting photoelectrochemical performance on α-Ga2O3 nanowire arrays by indium cation doping for self-powered ultraviolet detection. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25020024
Research & Educational Purpose Only:The translations, structured abstracts, analytical annotations, and data reports provided by SinoTechIntel are intended exclusively for academic research, internal corporate R&D, and educational benchmarking. They do not constitute formal engineering, chemical safety, legal, or professional advice.
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Frequently Asked Questions
What is the main achievement of this research?
The research demonstrates that indium doping of α-Ga2O3 nanowire arrays significantly boosts their photoelectrochemical performance, achieving a responsivity of 38.85 mA/W under 255 nm UV light, which is about three times higher than undoped α-Ga2O3, and enables self-powered operation with fast response times.
How were the In-doped α-Ga2O3 nanowire arrays fabricated?
The In-doped α-Ga2O3 nanowire arrays were fabricated on fluorine-doped tin oxide (FTO) substrates using a hydrothermal approach followed by thermal annealing.
What are the response and recovery times of the In-doped photodetector?
The In-doped photodetector exhibits response and recovery times of 13 ms and 8 ms, respectively, under 255 nm deep ultraviolet light.
Why is indium doping beneficial for α-Ga2O3?
Indium doping reduces the bandgap of α-Ga2O3, enhancing its absorption of UV light, which leads to improved photoelectrochemical performance and higher responsivity.
What practical application was demonstrated using the In-doped device?
Due to its superior responsivity, the In-doped device was used to develop a photoelectric imaging system, showcasing its potential for optoelectronic applications.
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