A γ-irradiated AlGaN/GaN Schottky barrier diode with barrier-decreased Schottky junction and high breakdown voltage

• γ irradiation lowers the Schottky barrier height at the W/GaN interface, reducing turn-on voltage from 0.47 V to 0.43 V. • Post-anode-annealing reinforces the Schottky interface, enabling a high breakdown voltage of 1.75 kV after γ irradiation. • The AlGaN/GaN SBD with self-terminated recessed anode and W anode demonstrates robust radiation resistance up to 100 kGy. • The device shows promise for power electronics in deep-space radiation environments.