Key Takeaways & Executive Findings
- •• γ irradiation lowers the Schottky barrier height at the W/GaN interface, reducing turn-on voltage from 0.47 V to 0.43 V. • Post-anode-annealing reinforces the Schottky interface, enabling a high breakdown voltage of 1.75 kV after γ irradiation. • The AlGaN/GaN SBD with self-terminated recessed anode and W anode demonstrates robust radiation resistance up to 100 kGy. • The device shows promise for power electronics in deep-space radiation environments.
Abstract
In this letter, we demonstrate the effect of γ irradiation on the lateral AlGaN/GaN Schottky barrier diodes (SBDs) with self-terminated recessed anode structure and low work-function metal tungsten (W) as anode. For a comprehensive evaluation of the radiation-resistance performance of the device, the total dose of γ irradiation is up to 100 kGy with irradiation time of 20 h. Attributed to the barrier lowering effect of the W/GaN interface induced by γ irradiation observed in the experiment, the extracted turn-on voltage (VON) defined at anode forward current of 1 mA decreases from 0.47 to 0.43 V. Meanwhile, benefiting from the reinforced Schottky interface treated by post-anode-annealing, a high breakdown voltage (BV) of 1.75 kV is obtained for the γ-irradiated AlGaN/GaN SBD, which shows the promising application for the deep-space radiation environment and promotes the development of radiation-resistance research for GaN SBDs.
1. Introduction
As the representative of third-generation semiconductors, gallium nitride (GaN) exhibits excellent properties, such as high breakdown field, high electron mobility, and high thermal conductivity. GaN-based electronics with high breakdown voltage (BV), low ON-resistance (RON), fast switching speed and high frequency capability, have rapidly developed alongside emerging fields, in particular, 5G communication, wireless fast charging and data centers. Nowadays, as humanity continues to explore the mysteries of space, devices in space inevitably encounter irradiation from γ rays, high-energy protons, and cosmic rays. Due to the narrowed bandgap, silicon (Si) Schottky barrier diodes (SBDs) are prone to radiation-induced damage, which degenerates the performance of devices and even causes failure. But fortunately, GaN SBDs offers inherent radiation resistance, which is attractive to power conversion systems in high-radiation areas and effectively mitigate system failures induced by radiation damage.
Many researchers have dedicated efforts to irradiation studies on high-electron-mobility transistors (HEMTs). Failure points and unwanted carriers will be generated around the Schottky-gate region when devices were biased at cut-off conditions. The γ irradiation-induced hole traps in ...
Loading authentic research manuscript (Pages 1–5)...
CHEN Jiahao, ZHANG Tao, TAO Ziqi, SU Kai, XU Shengrui, LI Xiangdong, SU Huake, ZHANG Yachao, HAO Yue, ZHANG Jincheng (2025). A γ-irradiated AlGaN/GaN Schottky barrier diode with barrier-decreased Schottky junction and high breakdown voltage. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25040026
Research & Educational Purpose Only:The translations, structured abstracts, analytical annotations, and data reports provided by SinoTechIntel are intended exclusively for academic research, internal corporate R&D, and educational benchmarking. They do not constitute formal engineering, chemical safety, legal, or professional advice.
Copyright & Intellectual Property Notice: Original copyright of the underlying source articles and experimental data remains with the respective authors, institutions, and original publishing journals. SinoTechIntel claims intellectual property only over its proprietary translations, analytical syntheses, and AEO structured enhancements in accordance with international fair use and academic citation principles.
Frequently Asked Questions
What is the effect of γ irradiation on the turn-on voltage of AlGaN/GaN Schottky barrier diodes?
γ irradiation lowers the Schottky barrier height at the W/GaN interface, reducing the turn-on voltage from 0.47 V to 0.43 V.
How does post-anode-annealing affect the breakdown voltage of γ-irradiated AlGaN/GaN SBDs?
Post-anode-annealing reinforces the Schottky interface, enabling a high breakdown voltage of 1.75 kV after γ irradiation.
What total dose of γ irradiation was used in this study?
The total dose of γ irradiation was up to 100 kGy with an irradiation time of 20 hours.
What are the potential applications of this γ-irradiated AlGaN/GaN SBD?
The device shows promise for power electronics in deep-space radiation environments due to its high breakdown voltage and radiation resistance.
What anode metal was used in the AlGaN/GaN Schottky barrier diode?
Tungsten (W), a low work-function metal, was used as the anode.
Related Technical Papers & Translations
A Novel Approach for Enhanced Brain Tumor Segmentation Using Multimodal MRI and Deep Learning
Brain tumor segmentation from multimodal MRI is crucial for diagnosis and treatment planning. In this study, we propose a novel deep learning framework that integrates structural and functional imaging modalities to improve segmentation accuracy. Our method employs a multi-scale attention mechanism and a hybrid loss function to handle class imbalance and boundary ambiguity. Evaluated on the BraTS benchmark, our approach achieves state-of-the-art performance, with Dice scores of 0.91, 0.87, and 0.84 for whole tumor, core, and enhancing tumor, respectively. Furthermore, we demonstrate the generalizability of our model across different scanners and protocols. Our findings suggest that the proposed method can significantly aid clinical decision-making and surgical planning.
Investigation of coupled acoustic and electrical responses and early warning approaches during re-loading of damaged coal
Initial damage from engineering disturbances in deep coal mining degrades mechanical properties and heightens dynamic-hazard risks, challenging conventional monitoring. This study probes the coupled acoustic-electrical responses of initially damaged coal under reloading and develops a multi-parameter, multi-level dynamic integrated early-warning model. Using a true-triaxial Split Hopkinson Pressure Bar (SHPB) system, we prepared specimens with graded damage by varying static deviatoric stresses and dynamic impacts. Uniaxial compression reloading was conducted with synchronous acoustic emission (AE) and resistivity monitoring. Joint time-domain responses of force, acoustics, and electricity delineated distinct loading stages. Time-frequency features were extracted via Fourier and wavelet transforms; crack architecture was quantified by 3D AE localization and fractal-dimension analysis. Initial damage markedly reduced load-bearing capacity. Resistivity decreased sharply with increasing deviatoric stress, while cumulative AE counts increased strongly. The AE spectrum evolved from bimodal to broadband with low- and high-frequency enhancement. The resistivity spectrum showed progressive bandwidth broadening, energy amplification, and high-frequency advancement. The AE spatial fractal dimension rose significantly during compaction. An integrated warning system combining multiscale entropy fusion, Temporal Convolutional Network (TCN)-Transformer forecasting, recurrence-network analysis, and a Bayesian framework yielded a 28.4 s lead time, offering a theoretical basis and technical pathway for intelligent prevention of dynamic hazards.
Influence of aggregate particle size on fracture behavior and energy evolution of cemented rockfill in the post-peak stage
Cemented rockfill (CRF) combines structural support with sustainable reuse of coal-derived solid waste. This study integrates digital image correlation, acoustic emission monitoring, and finite–discrete element simulations to investigate mechanical behavior, fracture development, and energy evolution of CRF containing 54% aggregate content with three grain-size distributions (5–10, 10–20, and 20–30 mm). Results indicate finer aggregates raise compressive strength and elastic modulus, and increase post-peak softening and residual stiffness. Fracture patterns transition from dominantly unidirectional failure in coarse specimens to pronounced X-shaped conjugate shear in fine specimens, with cracks initiating at boundaries and propagating inward. The proportion of failed joints at comparable strains decreases markedly with finer gradation, reflecting a more homogeneous crack network that enhances post-peak load retention and produces frequent minor stress fluctuations. Energy analyses reveal a coarse > medium > fine ordering in cumulative dissipation; however, finer aggregates delay rapid kinetic and dissipative energy release, promoting slower energy redistribution and improved load resistance. These findings quantify how aggregate gradation controls deformational mechanisms, crack topology, and energy partitioning, and provide design guidance for optimizing aggregate size and cementitious composition to enhance ductility, energy absorption, and structural reliability of CRF in underground engineering.