4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

• The HKSG-SJMOS achieves a 110.5% improvement in figure of merit (BV^2/Ron,sp) compared to conventional 4H-SiC SJMOS. • Integration of high-K gate dielectric and split gate reduces gate-drain capacitance (Cgd) and gate-drain charge (Qgd), leading to a 93.6% reduction in high-frequency figure of merit (Ron,sp·Cgd). • Switching losses are significantly lowered, with turn-on loss (Eon) reduced by 38.3% and turn-off loss (Eoff) by 31.6%. • The proposed device also exhibits superior reverse recovery characteristics, enhancing overall performance for power applications.