Key Takeaways & Executive Findings
- •• The HKSG-SJMOS achieves a 110.5% improvement in figure of merit (BV^2/Ron,sp) compared to conventional 4H-SiC SJMOS. • Integration of high-K gate dielectric and split gate reduces gate-drain capacitance (Cgd) and gate-drain charge (Qgd), leading to a 93.6% reduction in high-frequency figure of merit (Ron,sp·Cgd). • Switching losses are significantly lowered, with turn-on loss (Eon) reduced by 38.3% and turn-off loss (Eoff) by 31.6%. • The proposed device also exhibits superior reverse recovery characteristics, enhancing overall performance for power applications.
Abstract
A 4H-SiC superjunction (SJ) MOSFET (SJMOS) with integrated high-K gate dielectric and split gate (HKSG-SJMOS) is proposed in this paper. The key features of HKSG-SJMOS involve the utilization of high-K (HK) dielectric as the gate dielectric, which surrounds the source-connected split gate (SG) and metal gate. The high-K gate dielectric optimizes the electric field distribution within the drift region, creating a low-resistance conductive channel. This enhancement leads to an increase in the breakdown voltage (BV) and a reduction in the specific on resistance (Ron,sp). The introduction of split gate surrounded by high-K dielectric reduces the gate−drain capacitance (Cgd) and gate−drain charge (Qgd), which improves the switching characteristics. The simulation results indicate that compared to conventional 4H-SiC SJMOS, the HKSG-SJMOS exhibits a 110.5% enhancement in figure of merit (FOM, FOM = BV2/Ron,sp), a 93.6% reduction in the high frequency figure of merit (HFFOM) of Ron,sp·Cgd, and reductions in turn-on loss (Eon) and turn-off loss (Eoff) by 38.3% and 31.6%, respectively. Furthermore, the reverse recovery characteristics of HKSG-SJMOS has also discussed, revealing superior performance compared to conventional 4H-SiC SJMOS.
1. Introduction
Silicon carbide (SiC) has become a prominent example of third-generation power semiconductor materials, attributed to its wide bandgap, high critical electric field and high carrier saturation velocity. Silicon carbide power semiconductor devices are extensively utilized in various sectors, including electric vehicles, aerospace and satellite communications due to their advantages of high frequency, high temperature conductivity, and low on resistance.
Compared with traditional SiC planar MOSFETs, SiC trench MOSFETs exhibit lower on resistance, higher current density, and faster switching speed. At present, the design of SiC trench MOSFETs mainly aims to solve the contradiction between breakdown voltage (BV) and specific on-resistance (Ron,sp). Additionally, reducing gate−drain capacitance (Cgd) and gate−drain charge (Qgd) to improve switching speed and reduce switching losses is currently a prominent area of research.
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Jiafei Yao, Zhengfei Yang, Yuxuan Dai, Ziwei Hu, Man Li, Kemeng Yang, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo (2025). 4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25010005
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Frequently Asked Questions
What is the main innovation of the proposed HKSG-SJMOS?
The main innovation is the integration of a high-K gate dielectric and a source-connected split gate in a 4H-SiC superjunction MOSFET, which optimizes electric field distribution, reduces on-resistance, and improves switching performance.
How does the high-K gate dielectric improve device performance?
The high-K gate dielectric enhances the electric field distribution in the drift region, creating a low-resistance conductive channel, which increases breakdown voltage and reduces specific on-resistance.
What are the key switching improvements of the HKSG-SJMOS?
The split gate surrounded by high-K dielectric reduces gate-drain capacitance and gate-drain charge, leading to faster switching and lower switching losses (Eon and Eoff reduced by 38.3% and 31.6%, respectively).
How does the HKSG-SJMOS compare to conventional 4H-SiC SJMOS?
Compared to conventional 4H-SiC SJMOS, the HKSG-SJMOS shows a 110.5% improvement in figure of merit (BV^2/Ron,sp) and a 93.6% reduction in high-frequency figure of merit (Ron,sp·Cgd), along with superior reverse recovery characteristics.
What are the potential applications of this device?
The device is suitable for high-frequency, high-temperature, and high-efficiency power electronic systems, such as electric vehicles, aerospace, and satellite communications.
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