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Open AccessDOI: 10.1088/1674-4926/25030003Original Research

Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells

Napasuda Wichaiyo¹,Yuyao Wei¹,Chao Ding¹,Guozheng Shi¹,Witoon Yindeesuk¹,Liang Wang¹,Huān Bì¹,Jiaqi Liu¹,Shuzi Hayase¹,Yusheng Li¹,Yongge Yang¹,Qing Shen¹

Graduate School of Engineering Science, the University of Electro-Communications, Tokyo 1828585, Japan

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Academic Research Journal
Published:January 15, 2025Edition:Vol. 32, Issue 3 • pp. 100-112Citation:Napasuda Wichaiyo et al. (2025), Academic Research Journal
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Key Takeaways & Executive Findings

  • • First demonstration of solution-phase ligand exchange (SPLE) using inorganic ligands to synthesize stable p-type PbS quantum dot inks. • Precise control of SnI2 concentration enables tunable transition of PbS QDs from n-type to p-type conductivity. • PbS CQD solar cells with inorganic ligand-passivated HTL achieve a PCE of 10.93%, outperforming the conventional EDT-based LbL method (9.83%). • The improved performance is attributed to reduced interfacial defects and enhanced carrier mobility, offering a scalable route for high-performance flexible optoelectronics.
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Abstract

Traditional p-type colloidal quantum dot (CQD) hole transport layers (HTLs) used in CQD solar cells (CQDSCs) are commonly based on organic ligands exchange and the layer-by-layer (LbL) technique. Nonetheless, the ligand detachment and complex fabrication process introduce surface defects, compromising device stability and efficiency. In this work, we propose a solution-phase ligand exchange (SPLE) method utilizing inorganic ligands to develop stable p-type lead sulfide (PbS) CQD inks for the first time. Various amounts of tin (II) iodide (SnI2) were mixed with lead halide (PbX2; X = I, Br) in the ligand solution. By precisely controlling the SnI₂ concentration, we regulate the transition of PbS QDs from n-type to p-type. PbS CQDSCs were fabricated using two different HTL approaches: one with 1,2-ethanedithiol (EDT)-passivated QDs via the LbL method (control) and another with inorganic ligand-passivated QD ink (target). The target devices achieved a higher power conversion efficiency (PCE) of 10.93%, compared to 9.83% for the control devices. This improvement is attributed to reduced interfacial defects and enhanced carrier mobility. The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands, paving the way for high-performance and flexible CQD-based optoelectronic devices.

1. Introduction

Quantum dots (QDs) are semiconductor nanoparticles whose optical and electrical properties can be precisely tailored by adjusting their size and modifying their surface chemistry[1−3]. QDs synthesized from binary ionic compound semiconductors such as PbS, CdS, PbSe, CdSe, and InAs have gained significant attention in optoelectronics due to their extraordinary properties[4], including multi-exciton generation[5], solution processability[6], tunable absorption spectrum[7], and narrow emission line width[8]. The unique characteristics make QDs highly suitable for a wide range of optoelectronic applications, including light-emitting diodes[9, 10], photodetectors[11, 12], lasers[13], and photovoltaic devices[14−16].

In a typical lead sulfide colloidal quantum dot solar cell (PbS CQDSC), a several-hundred-nanometer-thick n-type CQD absorber layer (CQD AL) is strategically employed to absorb sunlight and generate charge carriers. However, the performance and stability of such devices are often limited by the quality of the hole transport layer (HTL), which is crucial for efficient charge extraction and minimizing recombination losses. Traditional HTLs rely on organic ligand exchange and layer-by-layer (LbL) deposition, which can introduce surface defects and complicate the fabrication process, thereby compromising device stability and efficiency. To address these challenges, this work introduces a solution-phase ligand exchange (SPLE) method using inorganic ligands to produce stable p-type PbS CQD inks, offering a promising alternative for high-performance and stable solar cells.

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Cite This Research Paper
Napasuda Wichaiyo, Yuyao Wei, Chao Ding, Guozheng Shi, Witoon Yindeesuk, Liang Wang, Huān Bì, Jiaqi Liu, Shuzi Hayase, Yusheng Li, Yongge Yang, Qing Shen (2025). Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25030003
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Frequently Asked Questions

What is the main innovation of this paper?

The paper presents a novel solution-phase ligand exchange (SPLE) method using inorganic ligands to synthesize stable p-type PbS quantum dot inks, which simplifies the fabrication of hole transport layers and improves solar cell performance.

How does the SnI2 concentration affect the PbS quantum dots?

By precisely controlling the SnI2 concentration, the conductivity type of PbS QDs can be tuned from n-type to p-type, enabling the formation of p-type inks suitable for hole transport layers.

What are the efficiency results compared to conventional methods?

The target devices using inorganic ligand-passivated QD ink achieved a power conversion efficiency (PCE) of 10.93%, which is higher than the 9.83% obtained from the conventional EDT-based layer-by-layer method.

What are the key advantages of the proposed method?

The proposed method reduces interfacial defects and enhances carrier mobility, leading to improved device efficiency and stability. It also offers a scalable and solution-processable route for fabricating high-performance flexible optoelectronic devices.

What is the significance of using inorganic ligands?

Inorganic ligands provide stronger passivation and better electronic coupling compared to organic ligands, resulting in reduced surface defects and improved charge transport, which are critical for high-efficiency solar cells.

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