Key Takeaways & Executive Findings
- •• A novel SiC-based light initiated multi-gate semiconductor switch (LIMS) with an optimized n+ layer and multi-light triggered anode design is proposed. • The saturation laser energy required to trigger the SiC LIMS is significantly reduced from 1.8 mJ to 40 μJ. • The fabricated SiC LIMS exhibits a forward blocking voltage exceeding 7000 V and a low leakage current of 0.3 μA at room temperature. • The device achieves a high output current density of 4.25 kA/cm² with a current rise rate (di/dt) greater than 20 kA/μs.
Abstract
To optimize turn on velocity of the SiC LIMS, we proposed a new structure for the LIMS that incorporates an optimized n+ layer and a multi-light triggered electrode design for the anode. The chip size is 5.5 mm × 5.5 mm in dimension. The experiment results indicate that the saturation laser energy required to trigger the prepared SiC LIMS has been decreased from 1.8 mJ to 40 μJ, with the forward blocking voltage of the prepared SiC LIMSs capable of withstanding over 7000 V. The leakage current is about 0.3 μA at room temperature, and the output current density achieves 4.25 kA/cm2 (with di/dt larger than 20 kA/μs).
1. Introduction
High power semiconductor switches are increasingly used to process ultra-high power levels ranging from hundreds of kilowatts to gigawatts. With the development of flexible AC transmission systems (FACTS), high voltage DC (HVDC) transmission systems and pulsed power systems, the trend of the ultra-high power application is rapidly increasing. Electrically-triggered and light-triggered thyristors are widely used in the above applications based on the advantage of bipolar conduction, low on-resistance, and high current handling capabilities. Light-triggered thyristor has more advantages in simplifying driver circuit and improving the electromagnetic compatibility, and can make the control of high-voltage device stacks easier, compared with the electrically-triggered thyristor.
Silicon carbide (SiC) is suitable for manufacturing ultra-high power and pulse power electronic devices due to its advantages such as wide bandgap width and high breakdown field strength, etc. Nechaev et al. reported that the pulse current of the SiC light-triggered thyristors (LTT) is up to 100 kA at a voltage of 6 kV, and the current rise rate di/dt reaches 0.19 kA/μs, the off-state leakage current not exceeding 50 μA. For Wang et al., trigger light source of the SiC LTT was a 365 nm UV LED with an intensity of 100 mW/cm2, the current rise rate di/dt reaches 0.02 kA/μs with the working voltage of 400 V, the output current is 2 A with the loop resistance 100 Ω. Yang et al. reported the SiC GTOs with the blocking voltages of 12.5 kV at a leakage current of 1 μA, but the current rising rate (di/dt) was 0.03 kA/μs and the output current is 4.6 A with the working voltage of 1 kV, and the loop resistance was 200 Ω. Li et al. reported the SiC GTOs with the blocking voltages of 8 kV, and the di/dt was 126 kA/μs, the output current is 4.6 A with the working voltage of 1 kV, and the loop resistance was 200 Ω.
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Chongbiao Luan, Jianqiang Yuan, Hongwei Liu, Longfei Xiao, Huiru Sha, Le Xu, Yang He, Lingyun Wang, Hongtao Li, Yupeng Huang (2025). Study of a novel SiC-based light initiated multi-gate semiconductor switch. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25020033
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Frequently Asked Questions
What is a SiC-based light initiated multi-gate semiconductor switch (LIMS)?
A SiC-based LIMS is a high-power semiconductor switch that uses light to trigger conduction, featuring multiple gates to enhance turn-on speed and current handling. It leverages silicon carbide's wide bandgap and high breakdown field for ultra-high power applications.
What are the key improvements of the novel SiC LIMS proposed in this study?
The novel design incorporates an optimized n+ layer and a multi-light triggered electrode for the anode, reducing the required laser energy from 1.8 mJ to 40 μJ, while achieving a forward blocking voltage over 7000 V and a high current density of 4.25 kA/cm².
What is the significance of the reduced laser energy requirement?
Reducing the laser energy from 1.8 mJ to 40 μJ significantly lowers the optical power needed for triggering, simplifying the driver circuitry and improving system efficiency and reliability in pulsed power applications.
How does the SiC LIMS compare to other light-triggered thyristors?
Compared to conventional SiC LTTs, the proposed LIMS achieves a much higher current rise rate (di/dt > 20 kA/μs) and lower leakage current (0.3 μA), while maintaining high blocking voltage, making it more suitable for demanding pulsed power systems.
What are the potential applications of this SiC LIMS?
The SiC LIMS is designed for ultra-high power applications such as flexible AC transmission systems (FACTS), high voltage DC (HVDC) transmission, and pulsed power systems, where fast switching and high current handling are critical.
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