Key Takeaways & Executive Findings
- •• A monolithic integrated full-wave bridge rectifier based on 100 nm ultra-thin β-Ga2O3 horizontal Schottky-barrier diodes was successfully fabricated. • The rectifier exhibits excellent full-wave rectification for AC input signals of 5, 12, and 24 V at various frequencies under solar-blind UV illumination. • Continuous tuning of the rectified output was achieved through solar-blind UV light-encoding, demonstrating optical programmability. • This work paves the way for optically programmable Ga2O3 AC-DC converters, advancing power electronics and optoelectronics integration.
Abstract
A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes (SBD) is prepared based on 100 nm ultra-thin β-Ga2O3 and demonstrated the solar-blind UV (SUV) light-modulated characteristics. Under SUV light illumination, the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5, 12, and 24 V with different frequencies. Further, experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding. This work provides valuable insights for the development of optically programmable Ga2O3 AC-DC converters.
1. Introduction
β-Ga2O3 has the ultrawide bandgap of 4.5−4.9 eV and the high breakdown electric field of 8 MV/cm, which demonstrates the great potential in power electronics[1−4]. There are many types of gallium oxide devices, Schottky-barrier diodes (SBD) is one of the most widely studied device structures. In recent years, the development of gallium oxide SBD is very rapid, and its performance has been greatly improved[5−10].
In the alternating current(AC)−direct current(DC) conversion process of power systems, it is particularly efficient and simple that four diodes are arranged in a bridge configuration to form a closed loop for full-wave rectification of the input AC signal[11, 12]. Therefore, some efforts recently have focused on the full-wave bridge rectifier based on β-Ga2O3 SBD. Zhou developed a unified hybrid compact model of a different structure β-Ga2O3 Schottky diodes (SBDs) for full-wave rectifier and mixer applications[13]. Hong proposed and fabricated a β-Ga2O3 discrete SBD-based rectifier with embedded microchannels in a ceramic substrate for active cooling[14]. Nevertheless, at present, this field is concentrated only on model research and on rectifiers composed of discrete devices, and there are few reports about actual monolithic integrated Ga2O3 full-wave rectifier circuit.
For gallium oxide diodes, horizontal devices are more conducive to large-scale integration, the ultra-thin Ga2O3 layer is beneficial for heat dissipation, and Ga2O3 itself also has an excellent absorption characteristic of solar-blind ultraviolet (SUV) light[15−18]. If these several advantages can be combined together to fabricate a SUV light-modulated Ga2O3 full-wave bridge rectifier, it should be very interesting.
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Haifeng Chen, Yuduo Zhang, Xiexin Sun, Jingguo Zong, Qin Lu, Yifan Jia, Zhenfu Feng, Zhan Wang, Lijun Li, Xiangtai Liu, Shaoqing Wang, Yue Hao (2025). Solar-blind UV light-modulated β-Ga2O3 full-wave bridge rectifier. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25040027
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Frequently Asked Questions
What is the main contribution of this paper?
The paper demonstrates a monolithic integrated full-wave bridge rectifier based on ultra-thin β-Ga2O3 Schottky-barrier diodes, which can be modulated by solar-blind UV light, enabling optically programmable AC-DC conversion.
What are the key performance characteristics of the rectifier?
The rectifier shows excellent full-wave rectification for AC input signals of 5, 12, and 24 V at various frequencies under solar-blind UV illumination, and its output can be continuously tuned by UV light intensity.
Why is β-Ga2O3 chosen for this application?
β-Ga2O3 has an ultrawide bandgap (4.5-4.9 eV), high breakdown electric field (8 MV/cm), and excellent absorption of solar-blind UV light, making it suitable for power electronics and UV-sensitive devices.
What are the potential applications of this technology?
The technology could be used in optically programmable power converters, smart power management systems, and integrated optoelectronic circuits where light-controlled rectification is beneficial.
How does the rectifier achieve light modulation?
The rectifier uses horizontal Schottky-barrier diodes on an ultra-thin β-Ga2O3 layer. Under solar-blind UV illumination, the photoconductive effect changes the diode characteristics, thereby modulating the rectified output.
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