Room-temperature electrically injected GaN-based vertical-cavity surface-emitting laser with conductive nanoporous distributed Bragg reflector

• Demonstrated room-temperature electrically injected GaN-based VCSEL using a conductive nanoporous DBR, overcoming the lack of p-type conductive DBRs. • The nanoporous DBR provides both high reflectivity and electrical conductivity, enabling vertical current injection and simplified fabrication. • Achieved continuous-wave lasing at room temperature with low threshold current, showcasing potential for high-density integration. • The approach eliminates the need for complex flip-chip bonding or substrate thinning, improving device yield and thermal management.