• A GaSb-based two-section integrated optical chip operating at ~2 μm was designed and fabricated, demonstrating stable mode-locked operation.
• The chip exhibits both near-optical soliton and multi-peak optical soliton states, confirmed by numerical fitting with fourth-order soliton solutions.
• This work provides the first evidence of soliton generation in GaSb-based two-section integrated lasers, expanding their potential for near-mid infrared applications.
• The results pave the way for high-performance integrated optical comb chips and advanced photonic devices in gas sensing, communications, and infrared countermeasures.
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