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Re-benchmarking polarization in wurtzite nitride semiconductors

Authors: Ping Wang; Haotian Ye; Rui Wang; Tao Wang; Fang Liu; Zhaoying Chen; Ding Wang; Bo Shen; Xinqiang Wang

DOI: 10.1088/1674-4926/26020013Status: Verified Translated Edition
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Key Findings in This Report

• Polarization in wurtzite nitrides is a vector quantity whose sign and magnitude depend on coordinate conventions and reference choices, leading to potential ambiguities in device simulations. • Recent experimental re-benchmarking of giant polarization in ferroelectric nitrides has provided self-consistent, experimentally validated values that correct previous inconsistencies. • Unified polarization benchmarks enable more predictive engineering of heterostructures and devices, particularly for GaN-based power and RF electronics. • Standardized polarization language is critical for accurate band diagrams, carrier distributions, and design rules in nitride semiconductor technology.