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Overcoming Challenges in InP-Based Quantum Dots: From Nucleation Mechanisms to High-Performance Quantum Dot Light-Emitting Diodes

Authors: BIAN Yangyang; LI Qian; CHEN Fei; YANG Chunhe; SHEN Huaibin; TANG Aiwei

DOI: 10.29026/oea.2026.250270Status: Verified Translated Edition
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Key Findings in This Report

• • InP-based QDs remain capped at PL QY <90% and emission linewidth >35 nm for most systems, with EQE and operational stability improving only incrementally; this performance ceiling directly limits their competitiveness against cadmium-based and perovskite emitters in commercial display color gamut and power efficiency metrics. • • Imbalanced carrier injection in InP-based QLEDs triggers Auger recombination, Joule heating, and low carrier recombination efficiency, which collectively degrade device lifetime and roll-off behavior; resolving these loss channels is prerequisite for meeting display-grade operational stability thresholds. • • Blue-emitting InP-based QLEDs exhibit the poorest performance among red, green, and blue devices, representing the single largest barrier to full-color display commercialization; the difficulty in achieving high-performance electroluminescence from small QDs compounds this limitation. • • The review identifies five priority research directives: fabricating large-sized InP QDs with near-unity PL QY, enhancing radiative recombination rate in the emitting layer, improving light extraction efficiency, elucidating luminescence and aging mechanisms via advanced characterization, and enhancing blue InP-based QLED performance; these define the critical path to practical deployment.