Modeling the electronic band-structure of strained long-wavelength Type-II superlattices using the scattering matrix method

• An eight-band k⋅p Hamiltonian combined with a scattering matrix method accurately models strained long-wavelength InAs/GaSb type-II superlattices. • The model incorporates quantum confinement, strain effects, and interface states, providing a comprehensive theoretical framework. • The scattering matrix method offers superior numerical stability compared to traditional transfer-matrix approaches, especially for thick structures and large basis sets. • The calculated band structures show exceptional agreement with experimental data, validating the model's predictive capability for LWIR photodetector design.