• The mixed-dimensional type II heterojunction of GaSb nanowires (NWs) and Bi2O2Se nanosheets (NSs) with a built-in electric field of ~140 meV is successfully constructed.
• As-fabricated NW/NS and NW array/NS mixed-dimensional heterojunction photodetectors exhibit as-expected high-performance self-powered photodetection behaviors, including ultralow Idark (0.07 and 0.08 pA), superior Ilight/Idark ratios (82 and 182) and ultrafast photoresponse (<2/2 and 6/4 ms).
• As-fabricated NW array/NS mixed-dimensional heterojunction self-powered photodetector promises the future imaging and photocommunication.
• The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction using a contact printing technique.
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