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Open AccessDOI: 10.11972/j.issn.1001-9014.2026.03.2026043Original Research

Mid-wavelength infrared detector array based on black phosphorus ink thin film

ZHU Long-Hai¹,DUAN Shi-Kun¹,CHEN Mao-Hua¹,BAI Yu-Zhuo¹,ZHAO Tian-Ge¹,YU Yi-Ye¹,WEI Qin¹,XU Teng-Fei¹,Piotr Martyniuk¹,WANG Zhen¹,HU Wei-Da¹

State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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Mid-wavelength infrared detector array based on black phosphorus ink thin film
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Academic Research Journal
Published:January 15, 2026Edition:Vol 45, Issue 3 • pp. 100-112Citation:ZHU Long-Hai et al. (2026), Academic Research Journal
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Key Takeaways & Executive Findings

  • • A 64×64 MWIR snapshot photodetector array was fabricated using a room-temperature BP ink deposition technique, achieving low oxidation loss of 1.12%. • Gradient centrifugation optimized BP nanosheet size and thickness, enhancing charge carrier transport and device performance. • The BP ink film array exhibited a photoresponsivity of 4.52 mA/W in the MWIR range with pixel non-uniformity as low as 10.1%. • This work provides a scalable route for large-area, uniform BP-based MWIR imaging arrays, overcoming limitations of conventional epitaxial methods.
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Abstract

Mid-wavelength infrared (MWIR) imaging technology plays a crucial role in aerospace, medical diagnostics, and autonomous driving. Van der Waals material black phosphorus (BP) exhibits exceptionally high carrier mobility and an ideal direct bandgap, making it a proven candidate for high-performance room-temperature MWIR sensing. However, the stringent growth conditions and anisotropic growth characteristics restrict the development of BP optoelectronic devices to small-scale laboratory demonstrations. Therefore, there is an urgent need to develop large-scale, uniform, and high-performance BP photodetector arrays. This study employed a room temperature preparation technique to deposit a large-area, uniform, low-oxidation BP ink film onto thin-film transistors, resulting in the development of a 64 × 64 high-performance MWIR snapshot photodetector array. The room temperature ink preparation process effectively prevents the oxidation of BP during fabrication, achieving an oxidation loss as low as 1.12%. In addition, a gradient centrifugation strategy was employed to optimize the lateral size and thickness distribution of the nanosheets in the BP ink, thereby facilitating the transport of charge carriers. The BP ink film array demonstrated a high photoresponsivity of 4.52 mA/W in the MWIR range, with pixel light response non-uniformity as low as 10.1%. This study presents a new approach for advancing large-scale MWIR imaging technology.

1. Introduction

Mid-wavelength infrared (MWIR) imaging is a technique for image acquisition and analysis in the MWIR band (3–5 µm) [1-5]. As the primary atmospheric window for infrared radiation, MWIR imaging exhibits low sensitivity to the atmosphere, enabling better capture of the infrared radiation characteristics of various substances [6-8]. This technique has demonstrated significant potential in medical diagnostics [9,10], environmental monitoring [11,12], industrial applications [13,14], and aerospace [15,16]. The core components of imaging cameras are MWIR photodetector arrays, typically constructed from narrow bandgap semiconductor materials such as InSb [17,18], HgCdTe [19-22], and type-II superlattices [23,24]. Although these technologies have been established for decades, they have long struggled to overcome challenges related to epitaxial growth constrained by lattice matching [25,26] and excessive thermal noise at room temperature [27].

Two-dimensional van der Waals (vdW) narrow bandgap material black phosphorus (BP) has emerged as a promising candidate for MWIR photodetector applications [28,29]. BP thin films, produced through mechanical exfoliation, have shown effective performance in unit photodetectors, achieving high sensitivity MWIR detection at room temperature [30,31]. However, the stringent growth conditions and anisotropic growth characteristics restrict the development of BP optoelectronic devices to small-scale laboratory demonstrations [32]. Consequently, these small-scale array devices can only collect imaging data via a step-scanning module during the imaging process, which falls short of achieving MWIR snapshot imaging [33].

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Cite This Research Paper
ZHU Long-Hai, DUAN Shi-Kun, CHEN Mao-Hua, BAI Yu-Zhuo, ZHAO Tian-Ge, YU Yi-Ye, WEI Qin, XU Teng-Fei, Piotr Martyniuk, WANG Zhen, HU Wei-Da (2026). Mid-wavelength infrared detector array based on black phosphorus ink thin film. SinoTechIntel Verified Research. https://doi.org/10.11972/j.issn.1001-9014.2026.03.2026043
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Frequently Asked Questions

What is the main achievement of this study?

The study successfully developed a 64×64 mid-wavelength infrared (MWIR) snapshot photodetector array based on black phosphorus (BP) ink thin film, achieving high performance with low oxidation loss and uniform response.

How was the BP ink film prepared?

The BP ink film was prepared using a room-temperature deposition technique combined with gradient centrifugation to optimize nanosheet size and thickness, which helped prevent oxidation and improve charge carrier transport.

What are the key performance metrics of the BP ink film array?

The array demonstrated a photoresponsivity of 4.52 mA/W in the MWIR range and a pixel light response non-uniformity as low as 10.1%.

Why is black phosphorus suitable for MWIR detection?

Black phosphorus has a direct bandgap and high carrier mobility, making it an ideal material for high-performance room-temperature MWIR sensing.

What are the potential applications of this technology?

The technology can be applied in aerospace, medical diagnostics, environmental monitoring, industrial applications, and autonomous driving, where MWIR imaging is crucial.

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