Leakage- and tunneling-current through the gate dielectric of organic thin film transistor using retarded Green's function, creation and annihilation operators

• Introduces a novel theoretical framework using retarded Green's function and creation/annihilation operators to model leakage and tunneling currents in organic thin-film transistors (OTFTs), addressing limitations of conventional relationships. • Provides a more complete leakage-current density equation that incorporates self-energy, wave function overlap, and particle exchange interactions, leading to improved accuracy in predicting gate dielectric performance. • Empirically compares five organic polymers (PEIE, Ps, PFS, ph, PMMA) and reports leakage current densities ranging from 0.8 to 20 nA/cm², offering a benchmark for material selection in low-power nanoelectronics. • Demonstrates potential for optimizing OTFT formulations to achieve lower energy consumption, which is critical for next-generation electronic and optoelectronic devices.