• • Graphene addition raised the Fenton system ORP from 337 mV to 347 mV at 30 min and increased the Ti4+ fraction in the surface oxide from 54.81 at.% to 60.13 at.%, directly accelerating chemical oxidation of TC4; this matters industrially because higher-valence oxide formation weakens the surface layer for subsequent mechanical removal, addressing the low material removal rate that plagues conventional polishing of titanium alloys.
• • The average polishing force dropped 50%, from 0.26 N to 0.13 N, with reduced temporal fluctuation after graphene incorporation; this force reduction and stabilization is critical for uniform material removal and for suppressing subsurface damage in aerospace and biomedical implant components where surface integrity governs fatigue life and biocompatibility.
• • Under optimized conditions of 1.0 mm machining gap and 400 rad/min spindle speed, surface roughness Sa decreased from 350 nm to 75 nm within 15 min; this removal rate and finish combination is industrially relevant because it demonstrates a viable throughput for finishing complex TC4 geometries without the multi-stage abrasive sequences typical of legacy processes.
• • The dual chemical (catalytic Fenton oxidation) and mechanical (lubrication-stabilized polishing) pathways operate simultaneously, with gap and spindle speed governing the dynamic equilibrium between oxidation and removal; this process window definition provides engineers with actionable control parameters for scaling the method to production-level magnetorheological finishing platforms.