GaN diodes comparative study for high energy protons detection

• Pin diodes on sapphire substrates outperform Schottky and GaN-substrate diodes for 0 V bias proton detection. • Achieved minimum detectable proton beam current below 1 pA/cm², demonstrating high sensitivity. • Detector response is linear with proton current and fast (<1 s), suitable for real-time monitoring. • GaN diodes show promise for high spatial resolution proton imaging in proton therapy.