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Official PDF TranslationInt. Journal of Minerals, Metallurgy and Materials (矿物冶金与材料学报)

Exploring the optoelectronic properties of calcium vanadate semiconductors: A combined experimental and DFT study

Authors: Xin Jin; Xianyong Ding; Guishang Pei; Shuaiqi Li; Xing’an Dong; Xiaolong Yang; Rui Wang; Peng Yu; Xuewei Lü

DOI: 10.1007/s12613-025-3095-9Status: Verified Translated Edition
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Key Findings in This Report

• Three high-purity calcium vanadates (CaV2O6, Ca2V2O7, Ca3V2O8) were synthesized and characterized as indirect band gap semiconductors with band gaps of 2.5–3.4 eV. • Standard DFT calculations accurately describe lattice parameters and band gaps, making them sufficient for these vanadates without the need for DFT+U corrections. • All three compounds exhibit significant photo- and electro-luminescence in the visible spectrum, indicating potential for phosphor and optoelectronic applications. • CaV2O6 shows a remarkable 10-fold luminescence enhancement under a modest pressure of 0.88 GPa, highlighting its promise for pressure-tunable optical devices.
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