Key Takeaways & Executive Findings
- •• InAsN nanowires with up to 0.7% nitrogen incorporation exhibit a red-shifted photoluminescence due to conduction band splitting, confirming the formation of a polytypic hexagonal nitride solid solution. • Surface passivation with an InP shell significantly reduces nonradiative recombination, enabling room-temperature photoluminescence emission from InAs-based nanowires. • The polytypic structure of the nanowires, dominated by wurtzite phase with parasitic sphalerite islands, is directly reflected in the low-temperature photoluminescence spectra. • Controlling the composition and morphology of InAs-based nanowires allows tuning their electronic structure, offering potential for tailored mid-IR detectors and sources.
Abstract
InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si (111) substrate. Also, heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry. In the low-temperature photoluminescence spectra of the grown structures, spectral features are observed that correspond to the polytypic structure of nanowires with a predominance of the wurtzite phase and parasitic islands of the sphalerite phase. It was shown that the interband photoluminescence spectral features of InAsN nanowires experience a red shift relative to the pristine InAs nanowires. The incorporation of nitrogen reduces the bandgap by splitting the conduction band into two subbands. The position of the spectral features in the photoluminescence spectra confirms the formation of a nitride solid solution with a polytypic hexagonal structure, having a concentration of nitrogen atoms of up to 0.7%. Additional passivation of the nanowire surface with InP leads to a decrease in the intensity of nonradiative recombination and an improvement in the photoluminescent response of the nanowires, which makes it possible to detect photoluminescence emission at room temperature. Thus, by changing the composition and morphology of nanowires, it is possible to control their electronic structure, which allows varying the operating range of detectors and mid-IR radiation sources based on them.
1. Introduction
InAs based nanowires (NWs) are of considerable interest for the development of infrared (IR) detectors, phototransistors and solar cells. The small band gap and high electron mobility of InAs distinguish it from other III–V semiconductors. However, the main disadvantage of such InAs-based NWs devices is the short minority carrier lifetime.
III–V-based NWs can form in pure wurtzite (hexagonal structure), pure sphalerite (cubic structure or zinc blend) or mixed polytypic structures. InAs-based NWs tend to crystallize into a metastable wurtzite phase, which has a larger bandgap than the zinc blende phase, commonly observed in bulk materials. NWs with mixed phases and a radial core/shell structure enable overcoming the Shockley–Queisser limit. In solar cells made of such NWs, it becomes possible to collect equilibrium carriers in the axial direction.
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Ratmir Ustimenko, Danila Karaulov, Maxim Vinnichenko, Ilya Norvatov, Andrey Kaveev, Vladimir Fedorov, Ivan Mukhin, Dmitry Firsov (2025). Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires. SinoTechIntel Verified Research. https://doi.org/10.1088/1674-4926/25030041
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Frequently Asked Questions
What is the effect of nitrogen incorporation on InAs nanowires?
Nitrogen incorporation reduces the bandgap by splitting the conduction band into two subbands, leading to a red shift in the photoluminescence spectra. This confirms the formation of a nitride solid solution with a polytypic hexagonal structure, with nitrogen concentrations up to 0.7%.
How does InP surface passivation improve photoluminescence?
InP surface passivation decreases the intensity of nonradiative recombination, thereby improving the photoluminescent response. This allows detection of photoluminescence emission at room temperature.
What is the significance of the polytypic structure in these nanowires?
The polytypic structure, predominantly wurtzite with parasitic sphalerite islands, influences the electronic and optical properties. The photoluminescence spectra exhibit features corresponding to this mixed phase, which is important for applications in photovoltaics and optoelectronics.
What growth method was used for the nanowires?
The nanowires were grown using plasma-assisted molecular beam epitaxy on a SiOx/Si (111) substrate, with InAs stems and core/shell geometries for heterostructures.
What are potential applications of these InAs-based nanowires?
By controlling composition and morphology, the electronic structure can be tuned, allowing variation of the operating range of detectors and mid-IR radiation sources based on these nanowires.
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