• Comprehensive investigation of dynamic avalanche in FS-IGBT under UIS with varying circuit parameters.
• Identification of gate voltage, load inductance, and temperature as key factors influencing avalanche reliability.
• Proposal of a circuit parameter optimization method to enhance dynamic avalanche capability.
• Practical guidelines: reduce gate voltage, increase load inductance, and lower temperature for improved reliability.
Download Full PDF: Dynamic avalanche reliability enhancement of FS-IGBT under unclamped inductive switching | SinoTechIntel | SinoTechIntel