• Atomic layer bonding (ALB) contacts achieve zero tunneling barrier and 100% carrier tunneling probability by forming direct chemical bonds between exposed metal atoms and electrode, eliminating the transport barrier inherent to van der Waals contacts.
• ALB interfaces exhibit a bonding energy of 0.281 eV/Ų, 5.4 times higher than conventional vdW interfaces (0.052 eV/Ų), indicating superior interfacial reconstruction and electrical performance.
• The ALB technology enables ultra-low contact resistance and high-temperature stability up to 400 °C, overcoming the lab-to-fab dilemma for 2D electronics.
• Theoretical design of ALB contacts is validated through atomic-scale experimental characterization, demonstrating a practical route toward near-ideal contacts in 2D semiconductors.