• Structural optimization of floating gate dimensions and active area profile expands control gate-to-active area corner distance by 22%, suppressing peak electric fields by 29% vertically and 18% horizontally.
• The optimized NOR flash cell achieves 100× reduction in early-cycle burnout failures and 7.38× improvement in time dependent dielectric breakdown lifetime.
• Programming and erasing speeds are accelerated by 15.4% and 7.3%, respectively, while data retention is maintained.
• The enhanced reliability enables a 97.5% reduction in Fowler-Nordheim stress time during characterization program testing, offering a cost-effective solution for automotive-grade flash memories.